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首页> 美国卫生研究院文献>Sensors (Basel Switzerland) >The Enhanced H2 Selectivity of SnO2 Gas Sensors with the Deposited SiO2 Filters on Surface of the Sensors
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The Enhanced H2 Selectivity of SnO2 Gas Sensors with the Deposited SiO2 Filters on Surface of the Sensors

机译：通过在传感器表面沉积SiO2过滤器提高了SnO2气体传感器的H2选择性

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This paper reports a study on the enhanced H2 selectivity of SnO2 gas sensors with SiO2 on the surface of the sensors obtained via chemical vapor deposition using dirthoxydimethylsilane as the Si source. The gas sensors were tested for sensing performance towards ethanol, acetone, benzene, and hydrogen at operating temperatures from 150 °C to 400 °C. Our experimental results show that higher selectivity and responses to hydrogen were achieved by the deposition of SiO2 on the surface of the sensors. The sensor with SiO2 deposited on its surface at 500 °C for 8 h exhibited the highest response (Ra/Rg = 144) to 1000 ppm hydrogen at 350 °C, and the sensor with SiO2 deposited on its surface at 600 °C for 4 h attained the maximum response variation coefficient (D = 69.4) to 1000 ppm hydrogen at 200 °C. The mechanism underlying the improvement in sensitivity and the higher responses to hydrogen in the sensors with SiO2 on their surface is also discussed.
机译：本文报道了通过使用二甲氧基二甲基硅烷作为硅源通过化学气相沉积获得的传感器表面上具有SiO2的SnO2气体传感器提高的H2选择性的研究。测试了气体传感器在150°C至400°C的工作温度下对乙醇，丙酮，苯和氢的传感性能。我们的实验结果表明，通过在传感器表面沉积SiO2可以实现更高的选择性和对氢的响应。在350°C下在其表面上沉积SiO2的传感器8 h表现出最高的响应（Ra / Rg = 144），在350°C下对1000 ppm的氢气具有最高的响应，而在600°C下在表面上沉积SiO2的传感器显示4种响应。 h在200°C下达到1000 ppm氢气时的最大响应变化系数（D = 69.4）。还讨论了在表面具有SiO2的传感器中提高灵敏度和提高对氢的响应的根本机理。

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