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Boosting the thermoelectric performance of p-type heavily Cu-doped polycrystalline SnSe via inducing intensive crystal imperfections and defect phonon scattering

机译:通过诱导强烈的晶体缺陷和缺陷声子散射来提高p型重掺杂Cu的多晶SnSe的热电性能

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摘要

In this study, we, for the first time, report a high Cu solubility of 11.8% in single crystal SnSe microbelts synthesized via a facile solvothermal route. The pellets sintered from these heavily Cu-doped microbelts show a high power factor of 5.57 μW cm–1 K–2 and low thermal conductivity of 0.32 W m–1 K–1 at 823 K, contributing to a high peak ZT of ∼1.41. Through a combination of detailed structural and chemical characterizations, we found that with increasing the Cu doping level, the morphology of the synthesized Sn1–xCuxSe (x is from 0 to 0.118) transfers from rectangular microplate to microbelt. The high electrical transport performance comes from the obtained Cu+ doped state, and the intensive crystal imperfections such as dislocations, lattice distortions, and strains, play key roles in keeping low thermal conductivity. This study fills in the gaps of the existing knowledge concerning the doping mechanisms of Cu in SnSe systems, and provides a new strategy to achieve high thermoelectric performance in SnSe-based thermoelectric materials.
机译:在这项研究中,我们首次报道了通过简便的溶剂热途径合成的单晶SnSe微带中的Cu溶解度高达11.8%。从这些重度掺杂Cu的微带烧结而成的小球显示出5.57μWcm –1 K –2 的高功率因数和0.32 W m –的低导热率1 K –1 在823 K时,ZT约为1.41。通过详细的结构和化学特征的组合,我们发现随着Cu掺杂水平的提高,合成的Sn1-xCuxSe(x从0到0.118)的形态从矩形微板转移到微带。高电传输性能来自获得的Cu + 掺杂态,并且位错,晶格畸变和应变等强烈的晶体缺陷在保持低导热性方面起着关键作用。这项研究填补了有关SnSe系统中Cu掺杂机理的现有知识的空白,并提供了一种在SnSe基热电材料中实现高热电性能的新策略。

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