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首页> 美国卫生研究院文献>Beilstein Journal of Nanotechnology >Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot
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Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot

机译：掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究

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摘要

A detailed theoretical study of the optical absorption in doped self-assembled quantum dots is presented. A rigorous atomistic strain model as well as a sophisticated 20-band tight-binding model are used to ensure accurate prediction of the single particle states in these devices. We also show that for doped quantum dots, many-particle configuration interaction is also critical to accurately capture the optical transitions of the system. The sophisticated models presented in this work reproduce the experimental results for both undoped and doped quantum dot systems. The effects of alloy mole fraction of the strain controlling layer and quantum dot dimensions are discussed. Increasing the mole fraction of the strain controlling layer leads to a lower energy gap and a larger absorption wavelength. Surprisingly, the absorption wavelength is highly sensitive to the changes in the diameter, but almost insensitive to the changes in dot height. This behavior is explained by a detailed sensitivity analysis of different factors affecting the optical transition energy.
机译：给出了对掺杂自组装量子点中光吸收的详细理论研究。严格的原子应变模型以及复杂的20波段紧密结合模型用于确保准确预测这些设备中单个粒子的状态。我们还表明，对于掺杂的量子点，多粒子配置相互作用对于准确捕获系统的光学跃迁也至关重要。这项工作中提出的复杂模型再现了未掺杂和掺杂量子点系统的实验结果。讨论了应变控制层的合金摩尔分数和量子点尺寸的影响。应变控制层的摩尔分数的增加导致较低的能隙和较大的吸收波长。出人意料的是，吸收波长对直径的变化高度敏感，而对点高度的变化几乎不敏感。通过对影响光学跃迁能量的不同因素进行详细的灵敏度分析来解释此行为。

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