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首页> 美国卫生研究院文献>Journal of Applied Physics >Analysis of Ce3+ luminescence quenching in solid solutions between Y3Al5O12 and Y3Ga5O12 by temperature dependence of photoconductivity measurement
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Analysis of Ce3+ luminescence quenching in solid solutions between Y3Al5O12 and Y3Ga5O12 by temperature dependence of photoconductivity measurement

机译：Y3Al5O12与Y3Ga5O12固溶体中Ce3 +发光猝灭的光电导温度依赖性分析

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Photocurrent excitation spectra were measured to investigate the quenching in the garnet solid solutions. Intense photocurrent excitation bands attributed to the lowest 5d1 and the second lowest 5d2 levels were observed in the Ce-doped Y3Al2Ga3O12 (Ce:YAGG) and Y3Ga5O12 (Ce:YGG). Based on the results of temperature dependence of photoconductivity, the 5d1 and 5d2 levels in the Ce:YAGG are found to be located below and within the conduction band, respectively, while both levels in the Ce:YGG are found to be located within its conduction band located at lower energy levels. In addition, the threshold of photoionization from the 4f level of Ce3+ to the conduction band in the Ce:YAGG and Ce:YGG were estimated to be 3.2, and 2.8 eV, respectively. We conclude that the main quenching process in the Ce:YAGG is caused by the thermally stimulated ionization process with activation energy of 90 meV from the 5d1 to the conduction band, and that in the Ce:YGG is caused by the direct ionization process from the 5d levels to the conduction band.
机译：测量光电流激发光谱以研究石榴石固溶体中的猝灭。在掺Ce的Y3Al2Ga3O12（Ce：YAGG）和Y3Ga5O12（Ce：YGG）中观察到了归因于最低5d1和第二最低5d2水平的强烈光电流激发带。根据光电导率的温度依赖性结果，发现Ce：YAGG中的5d1和5d2水平分别位于导带以下和导带内，而Ce：YGG中的两个水平均位于其导带内处于较低能级的频带。另外，Ce：YAGG和Ce：YGG中从Ce 3 + 的4f能级到导带的光电离阈值分别估计为3.2和2.8 eV。我们得出结论，Ce：YAGG中的主要猝灭过程是由热激发电离过程引起的，其活化能从5d1到导带为90 meV，而Ce：YGG中的主要猝灭过程是由Ce：YAGG的直接电离过程引起的。 5d水平到导带。

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