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首页> 美国卫生研究院文献>Scientific Reports >Non-Polar and Complementary Resistive Switching Characteristics in Graphene Oxide devices with Gold Nanoparticles: Diverse Approach for Device Fabrication
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Non-Polar and Complementary Resistive Switching Characteristics in Graphene Oxide devices with Gold Nanoparticles: Diverse Approach for Device Fabrication

机译：具有金纳米粒子的氧化石墨烯器件中的非极性和互补电阻切换特性：器件制造的多种方法

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Downscaling limitations and limited write/erase cycles in conventional charge-storage based non-volatile memories stimulate the development of emerging memory devices having enhanced performance. Resistive random-access memory (RRAM) devices are recognized as the next-generation memory devices for employment in artificial intelligence and neuromorphic computing, due to their smallest cell size, high write/erase speed and endurance. Unipolar and bipolar resistive switching characteristics in graphene oxide (GO) have been extensively studied in recent years, whereas the study of non-polar and complementary switching is scarce. Here we fabricated GO-based RRAM devices with gold nanoparticles (Au Nps). Diverse types of switching behavior are observed by changing the processing methods and device geometry. Tri-layer GO-based devices illustrated non-polar resistive switching, which is a combination of unipolar and bipolar switching. Five-layer GO-based devices depicted complementary resistive switching having the lowest current values ~12 µA; and this structure is capable of resolving the sneak path issue. Both devices show good retention and endurance performance. Au Nps in tri-layer devices assisted the conducting path, whereas in five-layer devices, Au Nps layer worked as common electrodes between co-joined cells. These GO-based devices with Au Nps comprising different configuration are vital for practical applications of emerging non-volatile resistive memories.
机译：传统的基于电荷存储的非易失性存储器中的缩小限制和有限的写/擦除周期刺激了具有增强性能的新兴存储设备的发展。电阻式随机存取存储器（RRAM）设备由于其最小的单元尺寸，较高的写入/擦除速度和耐用性而被公认为是在人工智能和神经形态计算中使用的下一代存储设备。近年来，对氧化石墨烯（GO）中的单极性和双极性电阻性开关特性进行了广泛的研究，而对非极性和互补性开关的研究却很少。在这里，我们用金纳米颗粒（Au Nps）制造了基于GO的RRAM器件。通过更改处理方法和设备几何形状，可以观察到多种类型的开关行为。基于三层GO的器件说明了非极性电阻开关，该开关是单极性和双极性开关的组合。基于五层GO的器件描述了互补电阻开关，具有最低的电流值〜12μA；并且这种结构能够解决潜行路径问题。两种器件均显示出良好的保持力和耐久性能。三层器件中的Au Nps辅助了导电路径，而在五层器件中，Au Nps层充当了共连接电池之间的公共电极。这些具有Au Nps且具有不同配置的基于GO的器件对于新兴的非易失性电阻式存储器的实际应用至关重要。

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