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首页> 美国卫生研究院文献>Scientific Reports >A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application
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A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application

机译：松弛路径约束的无选择器RRAM应用中一种通过松弛特性的新型电阻切换识别方法

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Resistive random access memory (RRAM) is a leading candidate in the race towards emerging nonvolatile memory technologies. The sneak path current (SPC) problem is one of the main difficulties in crossbar memory configurations. RRAM devices with desirable properties such as a selectorless, 1R-only architecture with self-rectifying behavior are potential SPC solutions. In this work, the intrinsic nonlinear (NL) characteristics and relaxation characteristics of bilayer high-k/low-k stacked RRAMs are presented. The intrinsic nonlinearity reliability of bilayer selectorless 1R-only RRAM without additional switches has been studied for their ability to effectively suppress SPC in RRAM arrays. The relaxation properties with resistive switching identification method by utilizing the activation energy (Ea) extraction methodology is demonstrated, which provides insights and design guidance for non-uniform bilayer selectorless 1R-only RRAM array applications.
机译：电阻性随机存取存储器（RRAM）在向新兴的非易失性存储器技术的竞争中处于领先地位。潜行电流（SPC）问题是纵横制存储器配置中的主要难题之一。具有理想特性的RRAM器件（例如具有自校正行为的无选择器，仅1R架构）是潜在的SPC解决方案。在这项工作中，提出了双层高k /低k堆叠RRAM的固有非线性（NL）特性和弛豫特性。研究了无附加选择的双层无选择器的仅1R双层RRAM的固有非线性可靠性，因为它们能够有效抑制RRAM阵列中的SPC。演示了利用激活能量（Ea）提取方法的电阻切换识别方法的弛豫特性，这为非均匀双层无层仅1R的RRAM阵列应用提供了见识和设计指导。

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