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Controlling evanescent waves using silicon photonic all-dielectric metamaterials for dense integration

机译:使用硅光子全介电超材料控制e逝波以实现密集集成

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摘要

Ultra-compact, densely integrated optical components manufactured on a CMOS-foundry platform are highly desirable for optical information processing and electronic-photonic co-integration. However, the large spatial extent of evanescent waves arising from nanoscale confinement, ubiquitous in silicon photonic devices, causes significant cross-talk and scattering loss. Here, we demonstrate that anisotropic all-dielectric metamaterials open a new degree of freedom in total internal reflection to shorten the decay length of evanescent waves. We experimentally show the reduction of cross-talk by greater than 30 times and the bending loss by greater than 3 times in densely integrated, ultra-compact photonic circuit blocks. Our prototype all-dielectric metamaterial-waveguide achieves a low propagation loss of approximately 3.7±1.0 dB/cm, comparable to those of silicon strip waveguides. Our approach marks a departure from interference-based confinement as in photonic crystals or slot waveguides, which utilize nanoscale field enhancement. Its ability to suppress evanescent waves without substantially increasing the propagation loss shall pave the way for all-dielectric metamaterial-based dense integration.
机译:对于光学信息处理和电子光子共集成,非常需要在CMOS铸造平台上制造的超紧凑,密集集成的光学组件。然而,在硅光子器件中无处不在的由纳米级限制引起的e逝波的较大空间范围会导致显着的串扰和散射损耗。在这里,我们证明了各向异性全介电超材料在全内反射中打开了新的自由度,以缩短e逝波的衰减长度。我们实验证明,在密集集成的超紧凑光子电路模块中,串扰减少了30倍以上,弯曲损耗减少了3倍以上。我们的原型全电介质超材料波导实现了大约3.7±1.0 dB / cm的低传播损耗,可与硅带状波导相媲美。我们的方法标志着偏离了基于光子晶体或缝隙波导的基于干扰的限制,后者利用了纳米级场增强。它抑制suppress逝波的能力不会显着增加传播损耗,这将为基于全介电超材料的致密集成铺平道路。

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