首页>
美国卫生研究院文献>Nature Communications
>Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching
【2h】
Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching
Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. However, channel formation typically requires an irreversible, not well controlled electroforming process, giving difficulty to independently control ionic and electronic properties. The device performance is also limited by the incomplete understanding of the underlying mechanisms. Here, we report a novel memristive model material system based on self-assembled Sm-doped CeO2 and SrTiO3 films that allow the separate tailoring of nanoscale ionic and electronic channels at high density (∼1012 inch−2). We systematically show that these devices allow precise engineering of the resistance states, thus enabling large on–off ratios and high reproducibility. The tunable structure presents an ideal platform to explore ionic and electronic mechanisms and we expect a wide potential impact also on other nascent technologies, ranging from ionic gating to micro-solid oxide fuel cells and neuromorphics.
展开▼
机译：电阻开关是基于纳米离子氧化还原工艺的非易失性存储单元，可提供节能的设备架构以及通往神经形态学和认知计算的开放途径。但是，通道形成通常需要不可逆的，控制不佳的电铸工艺，从而难以独立控制离子和电子性能。对底层机制的不完全理解也限制了设备性能。在这里，我们报告了一种基于自组装的掺S的CeO2和SrTiO3薄膜的新型忆阻模型材料系统，该系统允许分别定制高密度的纳米级离子和电子通道（〜10 12 inch −2 ）。我们系统地证明了这些设备可以精确地设计电阻状态，从而实现大的开关比和高再现性。可调谐结构为探索离子和电子机制提供了理想的平台，我们预计还将对其他新兴技术产生广泛的潜在影响，从离子门控到微固体氧化物燃料电池和神经形态。
展开▼
