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Induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures

机译:砷化镓异质结构中高迁移率二维电子气中的超导性

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摘要

Search for Majorana fermions renewed interest in semiconductor–superconductor interfaces, while a quest for higher-order non-Abelian excitations demands formation of superconducting contacts to materials with fractionalized excitations, such as a two-dimensional electron gas in a fractional quantum Hall regime. Here we report induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures and development of highly transparent semiconductor–superconductor ohmic contacts. Supercurrent with characteristic temperature dependence of a ballistic junction has been observed across 0.6 μm, a regime previously achieved only in point contacts but essential to the formation of well separated non-Abelian states. High critical fields (>16 T) in NbN contacts enables investigation of an interplay between superconductivity and strongly correlated states in a two-dimensional electron gas at high magnetic fields.
机译:对马约拉纳费米子的搜索重新引起了人们对半导体-超导体界面的兴趣,而对更高阶非阿贝尔激发的追求则要求与具有分数激发的材料形成超导接触,例如分数量子霍尔体系中的二维电子气。在这里,我们报告了砷化镓异质结构中高迁移率二维电子气中的感应超导性以及高度透明的半导体-超导体欧姆接触的发展。在0.6μm的范围内观察到了具有弹道结的特征温度依赖性的超电流,该电流以前只能在点接触中实现,但对形成良好分离的非阿贝尔态至关重要。 NbN触点中的高临界场(> 16 T)使得能够研究在高磁场下二维电子气中超导性与强相关态之间的相互作用。

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