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首页> 美国卫生研究院文献>Scientific Reports >Temperature tunability of surface plasmon enhanced Smith-Purcell terahertz radiation for semiconductor-based grating
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Temperature tunability of surface plasmon enhanced Smith-Purcell terahertz radiation for semiconductor-based grating

机译：用于半导体光栅的表面等离子体激元增强的Smith-Purcell太赫兹辐射的温度可调性

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摘要

In this work, the terahertz (THz) Smith-Purcell radiations (SPRs) for the relativistic electron bunch passing over an indium antimonide (InSb)-based substrate with a subwavelength grating under various temperatures of substrate are investigated by FDTD simulations and theoretical analyses. The explored SPR is locked and enhanced at a certain emission wavelength with the emission angle still following the wavelength-angle relation of the traditional SPR. This wavelength agrees with the (vacuum) wavelength of surface plasmons (SPs) at the air-InSb interface excited by the electron bunch. The enhancement of SPR at this wavelength is attributed to the energy from electron concentrated in the excited SPs and then transformed into radiation via the SPR mechanism. When the temperature of InSb increases, the emission wavelength of the enhanced SPR decreases along with the emission angles increasing gradually. This work demonstrates that the emission wavelength and angle of the enhanced SPR from the InSb grating can be manipulated by the temperature of InSb. The temperature tunability of SP-enhanced SPR has potential applications in the fields of optical beam steering and metamaterial light source.
机译：在这项工作中，通过FDTD模拟和理论分析，研究了相对论性电子束的太赫兹（THz）Smith-Purcell辐射（SPR）在具有亚波长光栅的亚锑化铟（InSb）基衬底上通过各种波长的衬底的情况。探索的SPR在特定的发射波长处被锁定和增强，并且发射角度仍遵循传统SPR的波长-角度关系。该波长与电子束激发的空气-InSb界面处的表面等离子体激元（SP）的（真空）波长一致。在此波长下SPR的增强归因于来自集中在受激SP中的电子的能量，然后通过SPR机制将其转化为辐射。当InSb的温度升高时，增强的SPR的发射波长随着发射角逐渐增大而减小。这项工作表明，InSb光栅的增强SPR的发射波长和角度可以通过InSb的温度来控制。 SP增强的SPR的温度可调性在光束控制和超材料光源领域具有潜在的应用。

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