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首页> 美国卫生研究院文献>Scientific Reports >Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors
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Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors

机译：可溶性苯并菲薄膜晶体管的晶界诱导偏置不稳定性

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Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect transistors (OFETs) have a strong influence on device performance, a substantial number of studies have been devoted to controlling the crystallization characteristics of organic semiconductors. We studied the intrinsic effects of GBs within 5,11-bis(triethylsilylethynyl) anthradithiophene (TES-ADT) thin films on the electrical properties of OFETs. The GB density was easily changed by controlling nulceation event in TES-ADT thin films. When the mixing time was increased, the number of aggregates in as-spun TES-ADT thin films were increased and subsequent exposure of the films to 1,2-dichloroethane vapor led to a significant increase in the number of nuleation sites, thereby increasing the GB density of TES-ADT spherulites. The density of GBs strongly influences the angular spread and crystallographic orientation of TES-ADT spherulites. Accordingly, the FETs with higher GB densities showed much poorer electrical characteristics than devices with lower GB density. Especially, GBs provide charge trapping sites which are responsible for bias-stress driven electrical instability. Dielectric surface treatment with a polystyrene brush layer clarified the GB-induced charge trapping by reducing charge trapping at the semiconductor-dielectric interface. Our study provides an understanding on GB induced bias instability for the development of high performance OFETs.
机译：由于有机场效应晶体管（OFET）的半导体层中的晶界（GBs）对器件性能有很大影响，因此已经进行了大量研究来控制有机半导体的结晶特性。我们研究了5,11-双（三乙基甲硅烷基乙炔基）蒽噻吩（TES-ADT）薄膜中的GBs对OFETs电性能的内在影响。通过控制TES-ADT薄膜中的成核作用，可以轻松改变GB密度。当增加混合时间时，纺制的TES-ADT薄膜中的聚集体数量增加，随后将膜暴露于1,2-二氯乙烷蒸气中，导致成核部位数量显着增加，从而增加了TES-ADT球晶的GB密度。 GBs的密度强烈影响TES-ADT球晶的角展度和晶体学取向。因此，具有较高GB密度的FET显示出比具有较低GB密度的器件差的电特性。特别是，GB提供了电荷俘获位点，这些电荷俘获位点是由偏置应力驱动的电不稳定引起的。用聚苯乙烯刷层进行的介电表面处理通过减少半导体-介电界面处的电荷俘获来澄清GB诱导的电荷俘获。我们的研究为高性能OFET的发展提供了由GB引起的偏压不稳定性的理解。

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