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首页> 美国卫生研究院文献>Scientific Reports >Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: enabling nanoscale direct write homo-junctions
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Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: enabling nanoscale direct write homo-junctions

机译：聚焦氦离子束辐照对几层WSe2的电输运性能的影响：实现纳米级直接写入同质结

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摘要

Atomically thin transition metal dichalcogenides (TMDs) are currently receiving significant attention due to their promising opto-electronic properties. Tuning optical and electrical properties of mono and few-layer TMDs, such as tungsten diselenide (WSe2), by controlling the defects, is an intriguing opportunity to synthesize next generation two dimensional material opto-electronic devices. Here, we report the effects of focused helium ion beam irradiation on the structural, optical and electrical properties of few-layer WSe2, via high resolution scanning transmission electron microscopy, Raman spectroscopy, and electrical transport measurements. By controlling the ion irradiation dose, we selectively introduce precise defects in few-layer WSe2 thereby locally tuning the resistivity and transport properties of the material. Hole transport in the few layer WSe2 is degraded more severely relative to electron transport after helium ion irradiation. Furthermore, by selectively exposing material with the ion beam, we demonstrate a simple yet highly tunable method to create lateral homo-junctions in few layer WSe2 flakes, which constitutes an important advance towards two dimensional opto-electronic devices.
机译：原子薄的过渡金属二硫化碳（TMDs）由于其有希望的光电性能而受到了广泛的关注。通过控制缺陷来调整单层和少数层TMD（例如二硒化钨（WSe2））的光学和电学性能是合成下一代二维材料光电器件的绝佳机会。在这里，我们通过高分辨率扫描透射电子显微镜，拉曼光谱和电迁移测量报告了聚焦氦离子束辐照对几层WSe2的结构，光学和电学性质的影响。通过控制离子辐照剂量，我们有选择地在几层WSe2中引入精确的缺陷，从而局部调整材料的电阻率和传输性能。相对于氦离子辐照后的电子传输，少数层WSe2中的空穴传输更加严重。此外，通过用离子束选择性地暴露材料，我们展示了一种简单而高度可调谐的方法，可在几层WSe2薄片中创建横向同质结，这对二维光电器件构成了重要的进步。

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