Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76 cm2 V−1 sec−1), a low operating voltage (less than 4 V), a high current on/off ratio (3 × 104), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process.
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机译：印刷电子在电子工程领域变得越来越重要，因为这种方法在生产柔性，低成本和大规模的薄膜晶体管方面非常高效。然而，TFT通常由刚性绝缘层构成，该刚性绝缘层由易碎的氧化物和氮化物组成并且需要较高的处理温度，这在用于印刷柔性TFT中时会引起许多问题。在这项研究中，我们解决了这些问题，并演示了一种生产喷墨打印TFT的方法，该方法包括通过在室温下通过启动化学气相沉积（iCVD）产生的超薄聚合物介电层和高度纯化的99.9％的半导体碳纳米管。我们的集成方法可以在具有高迁移率（高达9.76 cm 2 V -1 ）的聚醚砜（PES）基板上生产由CNT-TFT组成的灵活逻辑电路。 sec - 1），低工作电压（小于4 V），高电流开/关比（3×10 4 ）和总器件产量为90％。因此，应该强调的是，本研究为基于低成本和简单制造工艺生产具有高性能的柔性CNT-TFT逻辑电路的可行性制定了指南。
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