Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells

机译：AlGaN / GaN台阶量子阱中的中红外光电导响应

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AlGaN/GaN quantum structure is an excellent candidate for high speed infrared detectors based on intersubband transitions. However, fabrication of AlGaN/GaN quantum well infrared detectors suffers from polarization-induced internal electric field, which greatly limits the carrier vertical transport. In this article, a step quantum well is proposed to attempt solving this problem, in which a novel spacer barrier layer is used to balance the internal electric field. As a result, a nearly flat band potential profile is obtained in the step barrier layers of the AlGaN/GaN step quantum wells and a bound-to-quasi-continuum (B-to-QC) type intersubband prototype device with detectable photocurrent at atmosphere window (3–5 μm) is achieved in such nitride semiconductors.

机译：AlGaN / GaN量子结构是基于子带间跃迁的高速红外探测器的绝佳候选者。但是，AlGaN / GaN量子阱红外探测器的制造存在极化引起的内部电场，这大大限制了载流子的垂直传输。在本文中，提出了一种阶梯量子阱来尝试解决该问题，其中使用了新型的隔离层阻挡层来平衡内部电场。结果，在AlGaN / GaN台阶量子阱的台阶势垒层和在大气中具有可检测光电流的键合准连续（Bto-QC）型子带间原型设备中获得了几乎平坦的带电势分布在这种氮化物半导体中可达到3–5μm的窗口。

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期刊名称 Scientific Reports
作者
X. Rong; X. Q. Wang; G. Chen; X. T. Zheng; P. Wang; F. J. Xu; Z. X. Qin; N. Tang; Y. H. Chen; L. W. Sang; M. Sumiya; W. K. Ge; B. Shen;
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年(卷),期 -1(5),-1
年度 -1
页码 14386
总页数 7
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专利

1. Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells [J] . X. Rong, X. Q. Wang, G. Chen, Scientific reports. . 2015,第1期

机译：AlGaN / GaN台阶量子阱中的中红外光电导响应
2. Effect of delta doping on mid-infrared intersubband absorption in AlGaN/GaN step quantum well structures [J] . Liu D.-F., Jiang J.-G., Cheng Y., Physica, E. Low-dimensional systems & nanostructures . 2013,第Null期

机译：δ掺杂对AlGaN / GaN台阶量子阱结构中中红外子带间吸收的影响
3. Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells [J] . G. Chen, X. Q. Wang, K. Fu, Journal of Applied Physics . 2014,第17期

机译：AlGaN / GaN多量子阱中的多波段光电导响应
4. Persistent Photoconductivity in AlGaN/GaN Heterojunction Channels Caused by the Ionization of Deep Levels in the AlGaN Barrier Layer [C] . H. Murayama, Y. Akiyama, R. Niwa, ICPS 2012 . 2013

机译：AlGaN / GaN异质结的持续光电导率由AlGaN阻挡层中深度水平的电离引起的
5. Radiation Response and Reliability of High Speed AlGaN/GaN HEMTs [D] . Chen, Jin. 2016

机译：高速Algan / GaN Hemts的辐射响应与可靠性
6. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers [O] . Ya-Ju Lee, Yung-Chi Yao, Chun-Ying Huang, 2014

机译：使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
7. Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells [O] . X. Rong, X. Q. Wang, G. Chen, 2015

机译：AlGaN / GaN台阶量子阱中的中红外光电导响应

Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells

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