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ZnO nanowires array grown on Ga-doped ZnO single crystal for dye-sensitized solar cells

机译:在掺杂镓的ZnO单晶上生长的ZnO纳米线阵列用于染料敏化太阳能电池

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摘要

High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability. When it was employed as a photoanode in the DSSCs, the cell exhibited a 1.44% power-conversion efficiency under the illumination of one sun (AM 1.5G). The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition. This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.
机译:高质量ZnO纳米线阵列在Ga掺杂ZnO单晶(GZOSC)上同质外延生长,具有高导电性,高载流子迁移率和高热稳定性的优点。当将其用作DSSC中的光电阳极时,该电池在一个太阳光照下(AM 1.5G)表现出1.44%的功率转换效率。在相同条件下,性能优于基于ZnO纳米线/ FTO的DSSC。这种增强的性能主要归因于ZnO纳米线和GZOSC基板之间的完美界面,与传统FTO基板上生长的界面相比,该界面有助于降低载流子的散射和复合率。

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