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On-chip integrated vertically aligned carbon nanotube based super- and pseudocapacitors

机译:片上集成垂直排列的基于碳纳米管的超级电容器和伪电容器

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摘要

On-chip energy storage and management will have transformative impacts in developing advanced electronic platforms with built-in energy needs for operation of integrated circuits driving a microprocessor. Though success in growing stand-alone energy storage elements such as electrochemical capacitors (super and pseusocapacitors) on a variety of substrates is a promising step towards this direction. In this work, on-chip energy storage is demonstrated using architectures of highly aligned vertical carbon nanotubes (CNTs) acting as supercapacitors, capable of providing large device capacitances. The efficiency of these structures is further increased by incorporating electrochemically active nanoparticles such as MnOx to form pseudocapacitive architectures thus enhancing device capacitance areal specific capacitance of 37 mF/cm2. The demonstrated on-chip integration is up and down-scalable, compatible with standard CMOS processes, and offers lightweight energy storage what is vital for portable and autonomous device operation with numerous advantages as compared to electronics built from discrete components.
机译:片上能量存储和管理将对开发具有内置能量需求的高级电子平台(对驱动微处理器的集成电路进行操作)产生革命性影响。尽管成功地在各种基板上生长独立的储能元件(例如电化学电容器(超级电容器和伪电容器))是朝这个方向迈出的有希望的一步。在这项工作中,使用高度对齐的垂直碳纳米管(CNT)作为超级电容器的架构演示了片上能量存储,该超级电容器能够提供大的器件电容。通过结合电化学活性纳米粒子(例如MnOx)以形成伪电容架构,可以进一步提高这些结构的效率,从而将器件电容的面积比电容提高到37 mF / cm 2 。演示的片上集成是可伸缩的,可与标准CMOS工艺兼容,并提供轻量级的能量存储,这对便携式和自主设备操作至关重要,与由分立元件构建的电子产品相比,具有许多优势。

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