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Novel Colloidal MoS2 Quantum Dot Heterojunctions on Silicon Platforms for Multifunctional Optoelectronic Devices

机译:多功能光电器件硅平台上的新型胶体MoS2量子点异质结

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摘要

Silicon compatible wafer scale MoS2 heterojunctions are reported for the first time using colloidal quantum dots. Size dependent direct band gap emission of MoS2 dots are presented at room temperature. The temporal stability and decay dynamics of excited charge carriers in MoS2 quantum dots have been studied using time correlated single photon counting spectroscopy technique. Fabricated n-MoS2/p-Si 0D/3D heterojunctions exhibiting excellent rectification behavior have been studied for light emission in the forward bias and photodetection in the reverse bias. The electroluminescences with white light emission spectra in the range of 450–800 nm are found to be stable in the temperature range of 10–350 K. Size dependent spectral responsivity and detectivity of the heterojunction devices have been studied. The peak responsivity and detectivity of the fabricated heterojunction detector are estimated to be ~0.85 A/W and ~8 × 1011 Jones, respectively at an applied bias of −2 V for MoS2 QDs of 2 nm mean diameter. The above values are found to be superior to the reported results on large area photodetector devices fabricated using two dimensional materials.
机译:首次报道了使用胶体量子点的硅兼容晶圆级MoS2异质结。 MoS2点的尺寸依赖性直接带隙发射在室温下呈现。使用时间相关的单光子计数光谱技术研究了MoS2量子点中激发的载流子的时间稳定性和衰减动力学。对于正向偏置的光发射和反向偏置的光检测,已经研究了制造出具有优异整流性能的n-MoS2 / p-Si 0D / 3D异质结。发现白光发射光谱在450-800 nm范围内的电致发光在10-350 K的温度范围内是稳定的,已研究了异尺寸结器件的尺寸依赖性光谱响应度和检测率。对于2 nm均值的MoS2量子点,施加的偏置为−2 V时,所制造的异质结检测器的峰值响应度和检测率估计分别为〜0.85 A / W和〜8×10 11 Jones。直径。发现上述值优于使用二维材料制造的大面积光电检测器装置上的报告结果。

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