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首页> 美国卫生研究院文献>Scientific Reports >Thermally insensitive determination of the linewidth broadening factor in nanostructured semiconductor lasers using optical injection locking
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Thermally insensitive determination of the linewidth broadening factor in nanostructured semiconductor lasers using optical injection locking

机译：使用光注入锁定对纳米结构半导体激光器的线宽展宽因子进行热敏测定

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摘要

In semiconductor lasers, current injection not only provides the optical gain, but also induces variation of the refractive index, as governed by the Kramers-Krönig relation. The linear coupling between the changes of the effective refractive index and the modal gain is described by the linewidth broadening factor, which is responsible for many static and dynamic features of semiconductor lasers. Intensive efforts have been made to characterize this factor in the past three decades. In this paper, we propose a simple, flexible technique for measuring the linewidth broadening factor of semiconductor lasers. It relies on the stable optical injection locking of semiconductor lasers, and the linewidth broadening factor is extracted from the residual side-modes, which are supported by the amplified spontaneous emission. This new technique has great advantages of insensitivity to thermal effects, the bias current, and the choice of injection-locked mode. In addition, it does not require the explicit knowledge of optical injection conditions, including the injection strength and the frequency detuning. The standard deviation of the measurements is less than 15%.
机译：在半导体激光器中，电流注入不仅提供光学增益，而且引起折射率的变化，这取决于Kramers-Krönig关系。有效折射率和模态增益变化之间的线性耦合由线宽加宽因子描述，线宽加宽因子负责半导体激光器的许多静态和动态特性。在过去的三十年中，人们已经做出了大量努力来表征这一因素。在本文中，我们提出了一种简单，灵活的技术来测量半导体激光器的线宽展宽因子。它依赖于半导体激光器的稳定光注入锁定，并且线宽展宽因数是从残余侧模中提取的，残余侧模由放大的自发发射支持。这种新技术具有对热效应不敏感，偏置电流和注入锁定模式选择的巨大优势。另外，它不需要明确的光学注入条件知识，包括注入强度和频率失谐。测量的标准偏差小于15％。

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