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首页> 美国卫生研究院文献>Scientific Reports >Patterning highly ordered arrays of complex nanofeatures through EUV directed polarity switching of non chemically amplified photoresist
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Patterning highly ordered arrays of complex nanofeatures through EUV directed polarity switching of non chemically amplified photoresist

机译：通过非化学放大光刻胶的EUV定向极性切换对复杂纳米特征的高度有序阵列进行构图

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Given the importance of complex nanofeatures in the filed of micro-anoelectronics particularly in the area of high-density magnetic recording, photonic crystals, information storage, micro-lens arrays, tissue engineering and catalysis, the present work demonstrates the development of new methodology for patterning complex nanofeatures using a recently developed non-chemically amplified photoresist (n-CARs) poly(4-(methacryloyloxy)phenyl)dimethylsulfoniumtriflate) (polyMAPDST) with the help of extreme ultraviolet lithography (EUVL) as patterning tool. The photosensitivity of polyMAPDST is mainly due to the presence of radiation sensitive trifluoromethanesulfonate unit (triflate group) which undergoes photodegradation upon exposure with EUV photons, and thus brings in polarity change in the polymer structure. Integration of such radiation sensitive unit into polymer network avoids the need of chemical amplification which is otherwise needed for polarity switching in the case of chemically amplified photoresists (CARs). Indeed, we successfully patterned highly ordered wide-raging dense nanofeatures that include nanodots, nanowaves, nanoboats, star-elbow etc. All these developed nanopatterns have been well characterized by FESEM and AFM techniques. Finally, the potential of polyMAPDST has been established by successful transfer of patterns into silicon substrate through adaptation of compatible etch recipes.
机译：鉴于复杂的纳米特征在微/纳米电子学领域的重要性，特别是在高密度磁记录，光子晶体，信息存储，微透镜阵列，组织工程和催化领域的重要性，本研究证明了新方法的发展使用最近开发的非化学放大的光致抗蚀剂（n-CARs）聚（4-（甲基丙烯酰氧基）苯基）二甲基ulf三氟甲磺酸盐（polyMAPDST）来图案化复杂的纳米特征，借助极端紫外光刻（EUVL）作为图案化工具。聚MAPDST的光敏性主要归因于辐射敏感的三氟甲磺酸酯单元（三氟甲磺酸酯基）的存在，该单元在暴露于EUV光子后会发生光降解，从而导致聚合物结构发生极性变化。将这种辐射敏感单元整合到聚合物网络中，避免了化学放大的需要，否则在化学放大的光致抗蚀剂（CAR）的情况下，极性转换需要化学放大。确实，我们成功地图案化了包括纳米点，纳米波，纳米船，星形弯头等在内的高度有序的密集纳米特征。所有这些已开发的纳米图案均已通过FESEM和AFM技术进行了很好的表征。最后，通过调整兼容的蚀刻配方将图案成功转移到硅基板中，已经建立了polyMAPDST的潜力。

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