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A layer-nanostructured assembly of PbS quantum dot/multiwalled carbon nanotube for a high-performance photoswitch

机译:用于高性能光电开关的PbS量子点/多壁碳纳米管的层-纳米结构组件

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摘要

A layered nanostructure of a lead sulfide (PbS) quantum dot (QD)/multi-walled carbon nanotube (MWNT) hybrid was prepared by the electrostatic assembly after the phase transfer of PbS QDs from an organic to an aqueous phase. Well-crystallized PbS QDs with a narrow diameter (5.5 nm) was mono-dispersed on the sidewalls of MWNT by the electrostatic adsorption. Near-infrared absorption of PbS/MWNT nanostructures was improved and controlled by the packing density of PbS QDs. Efficient charge transfer between PbS and MWNT at the interface resulted in a remarkable quenching of photoluminescence up to 28.6% and a blue-shift of emission band by 300 nm. This feature was facilitated by band energy levels based on the intimate contact through the electrostatic interaction. Two-terminal devices using PbS/MWNT nanostructures showed an excellent on/off switching photocurrent and good stability during 20 cycles under light illumination due to electron transfer from PbS to MWNT. The photoswitch exhibited a high photo sensitivity up to 31.3% with the photocurrent of 18.3 μA under the light of 3.85 mW/cm2, which outperformed many QD/carbon-based nanocomposites. Results indicate that the electrostatic layered assembly of QD/MWNT nanostructure is an excellent platform for the fabrication of high-performance optoelectronic devices.
机译:在PbS QDs从有机相转移到水相后,通过静电组装制备了硫化铅(PbS)量子点(QD)/多壁碳纳米管(MWNT)杂化物的层状纳米结构。通过静电吸附将具有良好结晶度的窄直径(5.5 nm)的PbS QD单分散在MWNT的侧壁上。 PbS / MWNT纳米结构的近红外吸收通过PbS QD的堆积密度得到改善和控制。界面处PbS和MWNT之间的有效电荷转移导致高达28.6%的显着猝灭光致发光和300 emissionnm的发射带蓝移。基于通过静电相互作用的紧密接触的能带能级促进了该特征。由于电子从PbS转移到MWNT,使用PbS / MWNT纳米结构的两端子器件在光照下20个循环中显示出出色的开/关切换光电流和良好的稳定性。该光开关在3.85μmW/ cm 2 光下的光电流为18.3μA,具有高达31.3%的高光敏性,其性能优于许多QD /碳基纳米复合材料。结果表明,QD / MWNT纳米结构的静电分层组件是制造高性能光电器件的绝佳平台。

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