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Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures

机译：基于多层金属氧化物结构的高性能电阻和电容存储器的共存

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The Au/DyMnO3/Nb:SrTiO3/Au stack was demonstrated to be not only a high performance memristor but also a good memcapacitor. The switching time is below 10 ns, the retention is longer than 10⁵ s, and the change ratio of resistance (or capacitance) is larger than 100 over the 10⁸ switching cycles. Moreover, this stack has a broad range of intermediate states that are tunable by the operating voltages. It is indicated that the memory effects originate from the Nb:SrTiO3/Au junction where the barrier profile is electrically modulated. The serial connected Au/DyMnO3/Nb:SrTiO3 stack behaves as a high nonlinear resistor paralleling with a capacitor, which raises the capacitance change ratio and enhances the memory stability of the device.

机译：事实证明，Au / DyMnO3 / Nb：SrTiO3 / Au堆不仅是高性能的忆阻器，而且还是良好的忆阻器。切换时间低于10 ns，保持时间大于10 ^{5 s，并且在10 ^{8 切换中电阻（或电容）的变化率大于100周期。而且，该堆具有可通过工作电压调节的多种中间状态。研究表明，记忆效应源于Nb：SrTiO3 / Au结，其中势垒分布被电调制。串联的Au / DyMnO3 / Nb：SrTiO3叠层表现为与电容器并联的高非线性电阻器，从而提高了电容变化率并增强了器件的存储稳定性。}}

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期刊名称 Scientific Reports
作者
Z. B. Yan; J. -M. Liu;
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年(卷),期 -1(3),-1
年度 -1
页码 2482
总页数 7
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1. Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures [J] . Z. B. Yan, J. -M. Liu Scientific reports. . 2013,第1期

机译：基于多层金属氧化物结构的高性能电阻和电容存储器的共存
2. Porous Multilayered Films Based on poly(3,4- ethylenedioxythiophene) and poly(indole-5-carboxylic acid) and Their Capacitance Performance [J] . Danqin Li, Danhua Zhu, Weiqiang Zhou, International Journal of Electrochemical Science . 2017,第4期

机译：基于聚（3,4-乙撑二氧噻吩）和聚（吲哚-5-羧酸）的多孔多层膜及其电容性能
3. Annealing temperature dependence of capacitance-voltage characteristics in Ge-nanocrystal-based nonvolatile memory structures [J] . C. J. Park, H. Y. Cho, S. Kim, Journal of Applied Physics . 2006,第3期

机译：锗纳米晶非易失性存储结构中电容电压特性的退火温度依赖性
4. Resistance-Capacitance Equivalent Circuit For Quantum Dot and Nanocrystal Flash Memory Capacitor Structures [C] . R.J. Luyken, F. Hofmann, A.Lorke 31th European Solid-State Device Research Conference, Sep 11-13, 2001, Nuremberg, Germany . 2001

机译：量子点和纳米晶体闪存电容器结构的电阻电容等效电路
5. Electron transfer study of dye sensitized nanocrystalline metal-oxide semiconductors and design of multilayered dye-sensitized solar cells. [D] . Liu, Fang. 2006

机译：染料敏化的纳米晶金属氧化物半导体的电子转移研究和多层染料敏化太阳能电池的设计。
6. Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices [O] . Iulia Salaoru, Qingjiang Li, Ali Khiat, 2014

机译：TiO2固态器件中存储电阻和存储电容的共存
7. Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures [O] . Z. B. Yan, J. -M. Liu 2013

机译：基于多层金属氧化物结构的高性能电阻和电容存储器的共存
8. Effect of Atomic Layer Depositions (ALD)-Deposited Titanium Oxide (TiO2) Thickness on the Performance of Zr40Cu35Al15Ni10 (ZCAN)/TiO2/Indium (In)-Based Resistive Random Access Memory (RRAM) Structures. [R] . Chin, M. L., Amani, M., O'Regan, T. P., 2015

机译：原子层沉积（aLD） - 沉积二氧化钛（TiO2）厚度对Zr40Cu35al15Ni10（ZCaN）/ TiO2 /铟（In）基电阻随机存取存储器（RRam）结构性能的影响。

Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures

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