首页> 美国卫生研究院文献>Nanoscale Research Letters >Rational Design of 3D Honeycomb-Like SnS2 Quantum Dots/rGO Composites as High-Performance Anode Materials for Lithium/Sodium-Ion Batteries
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Rational Design of 3D Honeycomb-Like SnS2 Quantum Dots/rGO Composites as High-Performance Anode Materials for Lithium/Sodium-Ion Batteries

机译:3D蜂窝状SnS2量子点/ rGO复合材料作为锂/钠离子电池高性能阳极材料的合理设计

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摘要

Structure pulverization and poor electrical conductivity of metal dichalcogenides result in serious capacity decay both in lithium-ion batteries (LIBs) and sodium-ion batteries (SIBs). To resolve the above problems, a combination of metal dichalcogenides with conductive scaffolds as high-performance electrode materials has aroused tremendous interest recently. Herein, we synthesize a 3D honeycomb-like rGO anchored with SnS2 quantum dots (3D SnS2 QDs/rGO) composite via spray-drying and sulfidation. The unique 3D-ordered honeycomb-like structure can confine the volume change of SnS2 QDs in the lithiation/delithiation and sodiation/desodiation processes, provide enough space for electrolyte reservoirs, promote the conductivity of the SnS2 QDs, and improve the electron transfer. As a result, the 3D SnS2 QDs/rGO composite electrode delivers a high capacity and long cycling stability (862 mAh/g for LIB at 0.1 A/g after 200 cycles, 233 mAh/g for SIB at 0.5 A/g after 200 cycles). This study provides a feasible synthesis route for preparing 3D-ordered porous networks in varied materials for the development of high-performance LIBs and SIBs in future.Electronic supplementary materialThe online version of this article (10.1186/s11671-018-2805-x) contains supplementary material, which is available to authorized users.
机译:金属二硫化氢的结构粉碎和差的电导率会导致锂离子电池(LIB)和钠离子电池(SIB)的严重容量衰减。为了解决上述问题,金属二卤化物与导电支架作为高性能电极材料的组合近来引起了极大的兴趣。在本文中,我们通过喷雾干燥和硫化合成了锚定有SnS2量子点(3D SnS2 QDs / rGO)复合材料的3D蜂窝状rGO。独特的3D排序蜂窝状结构可以将SnS2 QD的体积变化限制在锂化/去锂化和钠化/脱氧过程中,为电解质池提供足够的空间,提高SnS2 QDs的电导率,并改善电子转移。结果,3D SnS2 QDs / rGO复合电极提供了高容量和长循环稳定性(200次循环后,LiB在0.1A / g时为862mAh / g,SIB在200次循环后为0.5A / g时为233mAh / g )。这项研究提供了一条可行的合成路线,可以为将来开发高性能LIB和SIB的各种材料制备3D有序的多孔网络。电子补充材料本文的在线版本(10.1186 / s11671-018-2805-x)包含补充材料,授权用户可以使用。

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