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首页> 美国卫生研究院文献>Nanoscale Research Letters >Comparative analysis of barium titanate thin films dry etching using inductively coupled plasmas by different fluorine-based mixture gas
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Comparative analysis of barium titanate thin films dry etching using inductively coupled plasmas by different fluorine-based mixture gas

机译：不同氟基混合气体使用电感耦合等离子体干法刻蚀钛酸钡薄膜的比较分析

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摘要

In this work, the inductively coupled plasma etching technique was applied to etch the barium titanate thin film. A comparative study of etch characteristics of the barium titanate thin film has been investigated in fluorine-based (CF4/O2, C4F8/O2 and SF6/O2) plasmas. The etch rates were measured using focused ion beam in order to ensure the accuracy of measurement. The surface morphology of etched barium titanate thin film was characterized by atomic force microscope. The chemical state of the etched surfaces was investigated by X-ray photoelectron spectroscopy. According to the experimental result, we monitored that a higher barium titanate thin film etch rate was achieved with SF6/O2 due to minimum amount of necessary ion energy and its higher volatility of etching byproducts as compared with CF4/O2 and C4F8/O2. Low-volatile C-F compound etching byproducts from C4F8/O2 were observed on the etched surface and resulted in the reduction of etch rate. As a result, the barium titanate films can be effectively etched by the plasma with the composition of SF6/O2, which has an etch rate of over than 46.7 nm/min at RF power/inductively coupled plasma (ICP) power of 150/1,000 W under gas pressure of 7.5 mTorr with a better surface morphology.
机译：在这项工作中，感应耦合等离子体蚀刻技术被应用于蚀刻钛酸钡薄膜。已经在氟基（CF4 / O2，C4F8 / O2和SF6 / O2）等离子体中研究了钛酸钡薄膜蚀刻特性的比较研究。使用聚焦离子束测量蚀刻速率，以确保测量的准确性。用原子力显微镜对刻蚀的钛酸钡薄膜的表面形貌进行了表征。通过X射线光电子能谱研究了蚀刻表面的化学状态。根据实验结果，我们监测到，由于所需的离子能量最少，并且与CF4 / O2和C4F8 / O2相比，其蚀刻副产物的挥发性更高，因此SF6 / O2可以实现更高的钛酸钡薄膜蚀刻速率。在被腐蚀的表面上观察到来自C4F8 / O 2 的低挥发性C-F化合物腐蚀副产物，导致腐蚀速率降低。结果，具有SF 6 / O 2 成分的等离子体可以有效地腐蚀钛酸钡膜，其腐蚀速率超过46.7nm /在7.5 mTorr的气压下，RF功率/电感耦合等离子体（ICP）功率为150 / 1,000 W时的最小时间为3分钟，具有更好的表面形态。

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