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Tuning of structural optical and magnetic properties of ultrathin and thin ZnO nanowire arrays for nano device applications

机译：用于纳米器件应用的超薄和薄ZnO纳米线阵列的结构光学和磁性性质的调整

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One-dimensional (1-D) ultrathin (15 nm) and thin (100 nm) aligned 1-D (0001) and (0001¯) oriented zinc oxide (ZnO) nanowire (NW) arrays were fabricated on copper substrates by one-step electrochemical deposition inside the pores of polycarbonate membranes. The aspect ratio dependence of the compressive stress because of the lattice mismatch between NW array/substrate interface and crystallite size variations is investigated. X-ray diffraction results show that the polycrystalline ZnO NWs have a wurtzite structure with a = 3.24 Å, c = 5.20 Å, and [002] elongation. HRTEM and SAED pattern confirmed the polycrystalline nature of ultrathin ZnO NWs and lattice spacing of 0.58 nm. The crystallite size and compressive stress in as-grown 15- and 100-nm wires are 12.8 nm and 0.2248 GPa and 22.8 nm and 0.1359 GPa, which changed to 16.1 nm and 1.0307 GPa and 47.5 nm and 1.1677 GPa after annealing at 873 K in ultrahigh vacuum (UHV), respectively. Micro-Raman spectroscopy showed that the increase in E2 (high) phonon frequency corresponds to much higher compressive stresses in ultrathin NW arrays. The minimum-maximum magnetization magnitude for the as-grown ultrathin and thin NW arrays are approximately 8.45 × 10−3 to 8.10 × 10−3 emu/g and approximately 2.22 × 10−7 to 2.190 × 10−7 emu/g, respectively. The magnetization in 15-nm NW arrays is about 4 orders of magnitude higher than that in the 100 nm arrays but can be reduced greatly by the UHV annealing. The origin of ultrathin and thin NW array ferromagnetism may be the exchange interactions between localized electron spin moments resulting from oxygen vacancies at the surfaces of ZnO NWs. The n-type conductivity of 15-nm NW array is higher by about a factor of 2 compared to that of the 100-nm ZnO NWs, and both can be greatly enhanced by UHV annealing. The ability to tune the stresses and the structural and relative occupancies of ZnO NWs in a wide range by annealing has important implications for the design of advanced photonic, electronic, and magneto-optic nano devices.
机译：一维（1-D）超薄（15 nm）和薄（100 nm）对齐的一维（0001）和（ 000 1 ¯ 取向的氧化锌（ZnO）纳米线（NW）阵列。在聚碳酸酯膜的孔中。研究了由于NW阵列/衬底界面之间的晶格失配和微晶尺寸变化而引起的压应力与纵横比的关系。 X射线衍射结果表明，多晶ZnO NW具有纤锌矿结构，a structure =3.24Å，c =5.20Å，[002]伸长。 HRTEM和SAED图案证实了超薄ZnO NW的多晶性质和0.58nm的晶格间距。 15纳米和100纳米导线中的微晶尺寸和压缩应力分别为12.8纳米和0.2248 GPa，22.8纳米和0.1359 GPa，在873 K的温度下退火后，分别变为16.1纳米和1.0307 GPa和47.5纳米和1.1677 GPa。超高真空（UHV）分别。显微拉曼光谱表明，E2（高）声子频率的增加对应于超薄NW阵列中更高的压应力。生长的超薄和薄NW阵列的最小最大磁化强度约为8.45×10 -3 至8.10×10 -3 emu / g和约2.22× 10 −7 至2.190×10 −7 emu / g。 15纳米NW阵列中的磁化强度比100纳米阵列中的磁化强度高约4个数量级，但是可以通过UHV退火大大降低。超薄和薄NW阵列铁磁性的起源可能是由ZnO NWs表面的氧空位引起的局部电子自旋矩之间的交换相互作用。 15纳米NW阵列的n型电导率比100纳米ZnO NW的n型电导率高约2倍，并且都可以通过特高压退火大大提高。通过退火在广泛范围内调整ZnO NW的应力以及结构和相对占有率的能力，对先进的光子，电子和磁光纳米器件的设计具有重要意义。

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