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美国卫生研究院文献>Nanoscale Research Letters
>Realization of radial p-n junction silicon nanowire solar cell based on low-temperature and shallow phosphorus doping
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Realization of radial p-n junction silicon nanowire solar cell based on low-temperature and shallow phosphorus doping
A radial p-n junction solar cell based on vertically free-standing silicon nanowire (SiNW) array is realized using a novel low-temperature and shallow phosphorus doping technique. The SiNW arrays with excellent light trapping property were fabricated by metal-assisted chemical etching technique. The shallow phosphorus doping process was carried out in a hot wire chemical vapor disposition chamber with a low substrate temperature of 250°C and H2-diluted PH3 as the doping gas. Auger electron spectroscopy and Hall effect measurements prove the formation of a shallow p-n junction with P atom surface concentration of above 1020 cm−3 and a junction depth of less than 10 nm. A short circuit current density of 37.13 mA/cm2 is achieved for the radial p-n junction SiNW solar cell, which is enhanced by 7.75% compared with the axial p-n junction SiNW solar cell. The quantum efficiency spectra show that radial transport based on the shallow phosphorus doping of SiNW array improves the carrier collection property and then enhances the blue wavelength region response. The novel shallow doping technique provides great potential in the fabrication of high-efficiency SiNW solar cells.
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机译：利用新型的低温浅磷掺杂技术，实现了基于垂直自支撑硅纳米线（SiNW）阵列的径向p-n结太阳能电池。采用金属辅助化学刻蚀技术制备了具有良好光捕获性能的SiNW阵列。浅磷掺杂工艺是在热线化学气相沉积室中进行的，衬底温度低至250°C，并用H2稀释的PH3作为掺杂气体。俄歇电子能谱和霍尔效应测量证明形成了浅pn结，P原子表面浓度大于10 20 cm -3 并且结深小于10nm 。径向p-n结SiNW太阳能电池的短路电流密度为37.13 mA / cm 2 ，与轴向p-n结SiNW太阳能电池相比提高了7.75％。量子效率谱表明，基于SiNW阵列浅磷掺杂的径向传输改善了载流子的收集性能，进而增强了蓝色波长区域的响应。新颖的浅掺杂技术为高效SiNW太阳能电池的制造提供了巨大的潜力。
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