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首页> 美国卫生研究院文献>Nanoscale Research Letters >Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration
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Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration

机译：Ge / GeOx纳米线的电阻开关记忆特性和氧离子迁移的证据

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摘要

The resistive switching memory of Ge nanowires (NWs) in an IrOx/Al2O3/Ge NWs/SiO2/p-Si structure is investigated. Ge NWs with an average diameter of approximately 100 nm are grown by the vapor–liquid-solid technique. The core-shell structure of the Ge/GeOx NWs is confirmed by both scanning electron microscopy and high-resolution transmission electron microscopy. Defects in the Ge/GeOx NWs are observed by X-ray photoelectron spectroscopy. Broad photoluminescence spectra from 10 to 300 K are observed because of defects in the Ge/GeOx NWs, which are also useful for nanoscale resistive switching memory. The resistive switching mechanism in an IrOx/GeOx/W structure involves migration of oxygen ions under external bias, which is also confirmed by real-time observation of the surface of the device. The porous IrOx top electrode readily allows the evolved O2 gas to escape from the device. The annealed device has a low operating voltage (<4 V), low RESET current (approximately 22 μA), large resistance ratio (>103), long pulse read endurance of >105 cycles, and good data retention of >104 s. Its performance is better than that of the as-deposited device because the GeOx film in the annealed device contains more oxygen vacancies. Under SET operation, Ge/GeOx nanofilaments (or NWs) form in the GeOx film. The diameter of the conducting nanofilament is approximately 40 nm, which is calculated using a new method.
机译：研究了IrOx / Al2O3 / Ge NWs / SiO2 / p-Si结构的Ge纳米线（NWs）的电阻开关存储器。汽液固相法生长平均直径约100 nm的Ge NW。 Ge / GeOx NWs的核-壳结构通过扫描电子显微镜和高分辨率透射电子显微镜得到证实。通过X射线光电子能谱观察到Ge / GeOx NW中的缺陷。由于Ge / GeOx NW中的缺陷，观察到了从10到300 K的宽泛的光致发光光谱，这也可用于纳米级电阻式开关存储器。 IrOx / GeOx / W结构中的电阻切换机制涉及氧离子在外部偏压下的迁移，这也通过实时观察器件表面得到证实。多孔的IrOx顶部电极很容易使放出的O2气体从设备中逸出。退火后的设备具有较低的工作电压（<4 V），较低的RESET电流（约22μA），较大的电阻比（> 10 3 ），较长的脉冲读取耐力> 10 5 周期，并且具有良好的数据保留> 10 4 s。其性能优于沉积后的器件，因为退火器件中的GeOx膜包含更多的氧空位。在SET操作下，Ge / GeOx纳米丝（或NW）在GeOx膜中形成。导电纳米丝的直径约为40 nm，这是使用新方法计算得出的。

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