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Properties of GaN-based light-emitting diodes on patterned sapphire substrate coated with silver nanoparticles prepared by mask-free chemical etching

机译：通过无掩模化学刻蚀制备的涂有银纳米颗粒的蓝宝石图案衬底上的GaN基发光二极管的性能

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摘要

This study reports on the use of a template that is made of silver nanoparticles (ANPs) that are dispersed on a patterned sapphire substrate (PSS) to improve the light output power of GaN-based light-emitting diodes (LEDs). The dipping of a sapphire substrate in hot H2SO4 solution generates white reaction products that are identified as a mixture of polycrystalline aluminum sulfates. These white reaction products can act as a natural etching mask in the preparation of an ANP-coated PSS (PSS-ANP) template. The optimal annealing temperature and time, surface morphology, and optical characteristics of the PSS-ANP template were investigated. The light output power of an LED that is bonded to the PSS-ANP template is approximately double than that of an LED that is not.

机译：这项研究报告了使用由分散在有图案的蓝宝石衬底（PSS）上的银纳米颗粒（ANP）制成的模板，以改善GaN基发光二极管（LED）的光输出功率的情况。将蓝宝石衬底浸入热H2SO4溶液中会生成白色反应产物，该产物被确定为多晶硫酸铝的混合物。这些白色反应产物可在制备ANP涂层的PSS（PSS-ANP）模板时充当天然蚀刻掩模。研究了PSS-ANP模板的最佳退火温度和时间，表面形貌和光学特性。粘合到PSS-ANP模板的LED的光输出功率大约是未粘合PSS-ANP模板的LED的光输出功率的两倍。

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期刊名称 Nanoscale Research Letters
作者
Lung-Chien Chen; Wen-Fang Tsai;
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作者单位

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年(卷),期 2013(8),1
年度 2013
页码 157
总页数 6
原文格式 PDF
正文语种
中图分类生化遗传学;生化药理学;
关键词
Mask-free wet etching Silver nanoparticle Patterned sapphire substrate Sapphire template;

机译：无掩模湿法刻蚀;银纳米颗粒;蓝宝石基板;蓝宝石模板;

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专利

1. Study of GaN-Based Light-Emitting Diodes Grown on Chemical Wet-Etching-Patterned Sapphire Substrate With V-Shaped Pits Roughening Surfaces [J] . Lee Y.-J., Kuo H. C., Lu T. C., Journal of Lightwave Technology . 2008,第11期

机译：V型坑粗糙表面化学湿法刻蚀蓝宝石衬底上生长的GaN基发光二极管的研究
2. Spatial Correlation Between Efficiency and Crystal Structure in GaN-Based Light-Emitting Diodes Prepared on High-Aspect Ratio Patterned Sapphire Substrate With Sputtered AlN Nucleation Layer [J] . Chang L., Chen Y., Kuo C. Electron Devices, IEEE Transactions on . 2014,第7期

机译：在具有高纵横比的溅射蓝宝石成核蓝宝石衬底上制备的GaN基发光二极管中，效率与晶体结构之间的空间相关性
3. The GaN-Based Light Emitting Diode Grown on Nanopattern Sapphire Substrate Prepared by Inductively Coupled Plasma Etching [J] . Lin J., Huang S., Su Y., Plasma Science, IEEE Transactions on . 2014,第12期

机译：电感耦合等离子体刻蚀制备的纳米图案蓝宝石衬底上生长的GaN基发光二极管
4. Simultaneously Enhancing Internal and Extraction Efficiencies of GaN-Based Light Emitting Diodes via Chemical-Wet-Etching Patterned-Sapphire-Substrate (CWE-PSS) [C] . Ya-Ju Lee, C. H. Chiu, H. C. Kuo, State-of-the-Art Program on Compound Semiconductors . 2007

机译：通过化学湿法蚀刻图案 - 蓝宝石 - 衬底（CWE-PSS）同时增强GaN基发光二极管的内部和提取效率
5. Recombination dynamics in silicon-doped aluminum gallium nitride and ultraviolet light-emitting diodes grown on sapphire and bulk aluminum nitride substrates by metal-organic vapor-phase epitaxy [D] . Chen, Kaixuan 2008

机译：通过金属有机气相外延在蓝宝石和块状氮化铝衬底上生长的掺硅氮化铝镓和紫外发光二极管的复合动力学
6. Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate [O] . Chia-Yu Lee, An-Jye Tzou, Bing-Cheng Lin, 2014

机译：蓝宝石衬底上具有反应性等离子体沉积AlN成核层的GaN基紫外发光二极管的效率提高
7. Properties of GaN-based light-emitting diodes on patterned sapphire substrate coated with silver nanoparticles prepared by mask-free chemical etching [O] . Lung-Chien Chen, Wen-Fang Tsai 2013

机译：通过无掩模化学刻蚀制备的涂有银纳米颗粒的蓝宝石图案衬底上的GaN基发光二极管的性能

Properties of GaN-based light-emitting diodes on patterned sapphire substrate coated with silver nanoparticles prepared by mask-free chemical etching

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