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Correlation between matrix structural order and compressive stress exerted on silicon nanocrystals embedded in silicon-rich silicon oxide

机译:富硅氧化硅中嵌入的硅纳米晶体的基体结构顺序与压缩应力之间的相关性

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摘要

AbstractSilicon nanocrystals embedded in a silicon oxide matrix were deposited by radio frequency reactive magnetron sputtering. By means of Raman spectroscopy, we have found that a compressive stress is exerted on the silicon nanocrystal cores. The stress varies as a function of silicon concentration in the silicon-rich silicon oxide layers varies, which can be attributed to changes of nanocrystal environment. By conducting the Fourier transform infrared absorption experiments, we have correlated the stresses exerted on the nanocrystal core to the degree of matrix structural order.
机译:摘要通过射频反应磁控溅射沉积了嵌入氧化硅基质中的硅纳米晶。通过拉曼光谱,我们发现在硅纳米晶核上施加了压应力。应力随着富硅氧化硅层中硅浓度的变化而变化,这可以归因于纳米晶体环境的变化。通过进行傅立叶变换红外吸收实验,我们已经将施加在纳米晶体核上的应力与基质结构有序程度相关联。

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