Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate

机译：Si（111）衬底上生长的闪锌矿单InAs纳米线的拉曼研究

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We report polarized Raman scattering studies on single InAs nanowires (NWs). The NWs were grown by metalorganic chemical vapor deposition on Si (111) substrates without external catalyst and showed a zinc-blende crystal structure. The single NWs were studied for different polarization excitation of the incident laser beam relative to the NW axis. The transverse optical (TO) mode exhibits maximum intensity when both the incident and analyzed light polarizations are parallel to the NW axis. The TO mode of InAs NWs is found to act like a nearly perfect dipole antenna, which can be attributed to the one-dimensional NW geometry and Raman selection rules.

机译：我们报告了有关单个InAs纳米线（NWs）的极化拉曼散射研究。通过在没有外部催化剂的Si（111）衬底上通过金属有机化学气相沉积法生长NW，并显示出闪锌矿晶体结构。研究了单个NW相对于NW轴的入射激光束的不同偏振激发。当入射和分析的光偏振都平行于NW轴时，横向光学（TO）模式将显示最大强度。发现InAs NW的TO模式就像一个几乎完美的偶极天线，可以归因于一维NW几何形状和拉曼选择规则。

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期刊名称 Nanoscale Research Letters
作者
Tianfeng Li; Lizhen Gao; Wen Lei; Lijun Guo; Tao Yang; Yonghai Chen; Zhanguo Wang;
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作者单位

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年(卷),期 2013(8),1
年度 2013
页码 27
总页数 7
原文格式 PDF
正文语种
中图分类生化遗传学;生化药理学;
关键词
Nanowires (NWs) Raman spectroscopy Phonon property Polarize 62.23.Hj 81.07.Gf 63.22.Gh 61.46.Km;

机译：纳米线（NWs）;拉曼光谱;声子性质;极化;62.23.Hj;81.07.Gf;63.22.Gh;61.46.Km;

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专利

1. Zinc-blende and wurtzite phase separation in catalyst-free molecular beam epitaxy vapor-liquid-solid-grown Si-doped GaAs nanowires on a Si(111) substrate induced by Si doping [J] . Akio Suzuki, Atsuhiko Fukuyama, Hidetoshi Suzuki, Japanese journal of applied physics . 2015,第3期

机译：Si掺杂诱导的无催化剂分子束外延气相固液生长Si掺杂GaAs纳米线中的闪锌矿和纤锌矿相分离
2. RAMAN STUDIES OF InAs/In_(0.53)Ga_(0.47)As SINGLE QUANTUM WELLS GROWN ON InP SUBSTRATE BY M.B.E. [J] . Lucia G. Quagliano, M. Gabriella Simeone, M. Rita Bruni, Superlattices and microstructures . 1995,第1期

机译：M.B.E.对InP基质上生长的单量子阱InAs / In_（0.53）Ga_（0.47）Raman的拉曼研究
3. Study of the wurtzite zinc-blende mixed-structured GaAs nanocrystals grown on Si (111) substrates [J] . Matsumoto K., Yasuda H., Mori H., Philosophical magazine: structure and properties of condensed matter . 2013,第7a9期

机译：Si（111）衬底上生长的纤锌矿型混合锌GaAs纳米晶体的研究
4. Very shallow two-dimensional electron gas realized by In/sub x/Al/sub 1-x/As/InAs single quantum well grown on GaAs111A substrate [C] . Gozu, S., Watanabe, . 2002

机译：通过在GaAs 111 A衬底上生长的In / sub x / Al / sub 1-x / As / InAs单量子阱实现的非常浅的二维电子气
5. Study of CMOS compatible ruthenium oxide Schottky contacts for AlGaN/GaN and InAlN/GaN diodes and high mobility transistors grown on silicon (111) substrates. [D] . Kyaw, Lwin Min. 2015

机译：用于AlGaN / GaN和InAlN / GaN二极管以及在硅（111）衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
6. Raman Spectroscopic Characterizations of Self-Catalyzed InP/InAs/InP One-Dimensional Nanostructures on InP(111)B Substrate using a Simple Substrate-Tilting Method [O] . Jeung Hun Park, Choong-Heui Chung 2019

机译：使用简单的基板倾斜方法在InP（111）B基板上自催化InP / InAs / InP一维纳米结构的拉曼光谱表征
7. Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate [O] . Tianfeng Li, Lizhen Gao, Wen Lei, 2013

机译：Si（111）衬底上生长的闪锌矿单InAs纳米线的拉曼研究
8. Combined Single-Phonon Raman and Photoluminescence Study of Direct and Indirect Band-Gap AlxGa1-xAs Alloys Grown by Molecular-Beam Epitaxy. [R] . Lao, P., Tang, W. C., Madhukar, A., 1989

机译：分子束外延生长直接和间接带隙alxGa1-xas合金的单声子拉曼光谱和光致发光研究。

Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate

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