In situ-grown hexagonal silicon nanocrystals in silicon carbide-based films

机译：碳化硅基薄膜中的原位生长六角形硅纳米晶体

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

摘要
著录项
相似文献
相关主题

摘要

Silicon nanocrystals (Si-NCs) were grown in situ in carbide-based film using a plasma-enhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure. The peak position of the photoluminescence can be controlled within a wavelength of 500 to 650 nm by adjusting the flow rate of the silane gas. We suggest that this phenomenon is attributed to the quantum confinement effect of hexagonal Si-NCs in silicon carbide-based film with a change in the sizes and emission states of the NCs.

机译：使用等离子增强化学气相沉积法在碳化物基薄膜中原位生长硅纳米晶体（Si-NCs）。高分辨率透射电子显微镜表明，这些纳米晶体嵌入在基于非晶碳化硅的基质中。电子衍射图分析表明，微晶具有六方纤锌矿硅相结构。通过调节硅烷气体的流速，可以将光致发光的峰位置控制在500至650nm的波长内。我们认为，这种现象是由于碳化硅基薄膜中六角形Si-NCs的量子限制效应所致，而NCs的尺寸和发射状态也发生了变化。

著录项

期刊名称 Nanoscale Research Letters
作者
Tae-Youb Kim; Chul Huh; Nae-Man Park; Cheol-Jong Choi; Maki Suemitsu;
展开▼
作者单位

展开▼
年(卷),期 2012(7),1
年度 2012
页码 634
总页数 5
原文格式 PDF
正文语种
中图分类生化遗传学;生化药理学;
关键词
Silicon nanocrystals in situ-formed Si-NCs Silicon carbide-based films Hexagonal silicon phase structure;

机译：硅纳米晶体;原位形成的Si-NC;基于碳化硅的薄膜;六方硅相结构;
入库时间 2022-08-21 11:04:11

相似文献

外文文献
中文文献
专利

1. Silicon nanocrystals on amorphous silicon carbide alloy thin films: Control of film properties and nanocrystals growth [J] . Jeremy Barbe, Ling Xie, Klaus Leifer, Thin Solid Films . 2012,第期

机译：非晶碳化硅合金薄膜上的硅纳米晶体：薄膜性能和纳米晶体生长的控制
2. In situ-grown silicon quantum dots in SiCx:H/a-C:H hetero-multilayer films prepared by plasma enhanced chemical vapor deposition method [J] . Jiang Lihua, Tan Xinyu, Xiao Ting, Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2017,第期

机译：在SICX的原位生长的硅量子点：H / A-C：H异质 - 多层膜通过等离子体增强化学气相沉积方法制备
3. Electroluminescence from metal-oxide-semiconductor devices based on erbium silicate nanocrystals and silicon nanocrystals co-embedded in silicon oxide thin films [J] . Majun He, Deren Yang, Dongsheng Li Journal of materials science . 2021,第15期

机译：基于氧化铒硅酸盐的金属氧化物半导体器件和硅纳米晶体中的电致发光，氧化硅薄膜
4. Degradation of Hexagonal Silicon Carbide-based Bipolar Devices [C] . Skowronski, M. . 2005

机译：六角形碳化硅双极器件的降解
5. Enhanced Crystallization of Amorphous Silicon Films with Silicon Nanocrystal Seeding. [D] . Cui, Lin. 2013

机译：硅纳米晶种增强非晶硅膜的结晶。
6. Growth of Hexagonal Columnar Nanograin Structured SiC Thin Films on Silicon Substrates with Graphene–Graphitic Carbon Nanoflakes Templates from Solid Carbon Sources [O] . Xingfang Liu, Guosheng Sun, Bin Liu, 2013

机译：固碳源的石墨烯-石墨碳纳米薄片模板在硅基底上生长六方柱状纳米晶结构的SiC薄膜
7. In situ-grown hexagonal silicon nanocrystals in silicon carbide-based films [O] . Tae-Youb Kim, Chul Huh, Nae-Man Park, 2012

机译：碳化硅基薄膜中的原位生长六角形硅纳米晶体
8. Research and Development on Advanced Silicon Carbide Thin Film Growth Techniquesand Fabrication of High Power and Microwave Frequency Silicon Carbide-Based Device Structures [R] . Davis, R. F., Trew, R. J., Palmour, J. W., 1992

机译：先进碳化硅薄膜生长技术的研究与开发及高功率微波频率碳化硅器件结构的制作

In situ-grown hexagonal silicon nanocrystals in silicon carbide-based films

摘要

著录项

相似文献

相关主题

期刊订阅