Junction investigation of graphene/silicon Schottky diodes

机译：石墨烯/硅肖特基二极管的结研究

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

摘要
著录项
相似文献
相关主题

摘要

Here we present a facile technique for the large-scale production of few-layer graphene flakes. The as-sonicated, supernatant, and sediment of the graphene product were respectively sprayed onto different types of silicon wafers. It was found that all devices exhibited current rectification properties, and the supernatant graphene devices have the best performance. Schottky junctions formed between graphene flakes and silicon n-type substrates exhibit good photovoltaic conversion efficiency while graphene/p-Si devices have poor light harvesting capability.

机译：在这里，我们提出了一种用于大规模生产几层石墨烯薄片的简便技术。超声处理后的石墨烯产物的上清液和沉积物分别喷涂到不同类型的硅片上。发现所有器件均表现出电流整流特性，并且上层石墨烯器件具有最佳性能。石墨烯薄片与硅n型衬底之间形成的肖特基结表现出良好的光电转换效率，而石墨烯/ p-Si器件的光收集能力却很差。

著录项

期刊名称 Nanoscale Research Letters
作者
Muatez Mohammed; Zhongrui Li; Jingbiao Cui; Tar-pin Chen;
展开▼
作者单位

展开▼
年(卷),期 2012(7),1
年度 2012
页码 302
总页数 6
原文格式 PDF
正文语种
中图分类生化遗传学;生化药理学;
关键词
Graphene heterojunction Schottky diode;

机译：石墨烯;异质结;肖特基二极管;

相似文献

外文文献
中文文献
专利

1. Junction properties analysis of silicon back-to-back Schottky diode with reduced graphene oxide Schottky electrodes [J] . Azmi Siti Nadiah Che, Abd Rahman Shaharin Fadzli, Nawabjan Amirjan, Microelectronic Engineering . 2018,第sepa期

机译：氧化石墨烯肖特基电极与硅背对背肖特基二极管的结特性分析
2. High performance, self- powered photodetectors based on a graphene/silicon Schottky junction diode [J] . Periyanagounder Dharmaraj, Gnanasekar Paulraj, Varadhan Purushothaman, Journal of Materials Chemistry, C. materials for optical and electronic devices . 2018,第35期

机译：基于石墨烯/硅肖特基结二极管的高性能，自动光电探测器
3. Forward-bias diode parameters, electronic noise, and photoresponse of graphene/silicon Schottky junctions with an interfacial native oxide layer [J] . Yanbin An, Ashkan Behnam, Eric Pop, Journal of Applied Physics . 2015,第11期

机译：带有界面自然氧化物层的石墨烯/硅肖特基结的正向偏置二极管参数，电子噪声和光响应
4. Graphene-Silicon Schottky junction fabricating by laser reduced graphene oxides [C] . Ruiqiang Shao International Conference on Applied Science, Engineering and Technology . 2013

机译：通过激光还原石墨烯氧化物制造石墨烯 - 硅肖特基结
5. Fundamental Studies of Supported Graphene Interfaces: Defect Density of States in Graphene Field Effect Transistors (FETs) and Ideal Graphene - Silicon Schottky Diodes [D] . Sinha, Dhiraj P. 2014

机译：支持石墨烯界面的基本研究：石墨烯场效应晶体管（FET）中缺陷密度和理想石墨烯 - 硅肖丝狄克二极管
6. Sandwich-Doping for a LargeSchottky Barrier and Long-TermStability in Graphene/Silicon Schottky Junction Solar Cells [O] . Min Ji Im, Seok-Ki Hyeong, Min Park, 2021

机译：三明治掺杂很大肖特基障碍和长期石墨烯/硅肖特基结太阳能电池中的稳定性
7. Junction investigation of graphene/silicon Schottky diodes [O] . Muatez Mohammed, Zhongrui Li, Jingbiao Cui, 2012

机译：石墨烯/硅肖特基二极管的结研究

Junction investigation of graphene/silicon Schottky diodes

摘要

著录项

相似文献

相关主题

期刊订阅