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首页> 美国卫生研究院文献>Nanoscale Research Letters >Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots
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Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots

机译：使用纳米级（1.3 nm）核-壳IrOx纳米点的依赖于形成极性的改进的电阻开关存储特性

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摘要

Improved resistive switching memory characteristics by controlling the formation polarity in an IrOx/Al2O3/IrOx-ND/Al2O3/WOx/W structure have been investigated. High density of 1 × 1013/cm2 and small size of 1.3 nm in diameter of the IrOx nano-dots (NDs) have been observed by high-resolution transmission electron microscopy. The IrOx-NDs, Al2O3, and WOx layers are confirmed by X-ray photo-electron spectroscopy. Capacitance-voltage hysteresis characteristics show higher charge-trapping density in the IrOx-ND memory as compared to the pure Al2O3 devices. This suggests that the IrOx-ND device has more defect sites than that of the pure Al2O3 devices. Stable resistive switching characteristics under positive formation polarity on the IrOx electrode are observed, and the conducting filament is controlled by oxygen ion migration toward the Al2O3/IrOx top electrode interface. The switching mechanism is explained schematically based on our resistive switching parameters. The resistive switching random access memory (ReRAM) devices under positive formation polarity have an applicable resistance ratio of > 10 after extrapolation of 10 years data retention at 85°C and a long read endurance of 105 cycles. A large memory size of > 60 Tbit/sq in. can be realized in future for ReRAM device application. This study is not only important for improving the resistive switching memory performance but also help design other nanoscale high-density nonvolatile memory in future.
机译：已经研究了通过控制IrOx / Al2O3 / IrOx-ND / Al2O3 / WOx / W结构中的形成极性来改善的电阻开关存储特性。通过高分辨率透射电子观察到，IrOx纳米点（NDs）的密度高，为1×10 13 / cm 2 ，尺寸较小，直径仅为1.3 nm。显微镜检查。 IrOx-NDs，Al2O3和WOx层通过X射线光电子能谱确认。与纯Al2O3器件相比，电容电压滞后特性在IrOx-ND存储器中显示出更高的电荷俘获密度。这表明IrOx-ND器件的缺陷部位比纯Al 2 O 3 器件的缺陷部位更多。观察到在IrO x 电极上正形成极性下稳定的电阻开关特性，并且通过氧离子向Al 2 O 3 <的迁移来控制导电灯丝/ sub> / IrO x 顶部电极接口。根据我们的电阻切换参数，对切换机制进行了简要说明。在外推极性为正的极性下的电阻式开关随机存取存储器（ReRAM）器件在85°C下外推10年数据保留后的适用电阻比> 10，并且具有10 5 个循环的长时间读取耐久性。将来可为ReRAM器件应用实现大于60 Tbit / sq in。的大存储容量。这项研究不仅对改善电阻式开关存储器的性能很重要，而且有助于将来设计其他纳米级高密度非易失性存储器。

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