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首页> 美国卫生研究院文献>Nanoscale Research Letters >Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles
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Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles

机译：基于石墨-InP或石墨-GaN肖特基势垒的高灵敏度氢传感器电泳沉积钯纳米颗粒

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摘要

Depositions on surfaces of semiconductor wafers of InP and GaN were performed from isooctane colloid solutions of palladium (Pd) nanoparticles (NPs) in AOT reverse micelles. Pd NPs in evaporated colloid and in layers deposited electrophoretically were monitored by SEM. Diodes were prepared by making Schottky contacts with colloidal graphite on semiconductor surfaces previously deposited with Pd NPs and ohmic contacts on blank surfaces. Forward and reverse current-voltage characteristics of the diodes showed high rectification ratio and high Schottky barrier heights, giving evidence of very small Fermi level pinning. A large increase of current was observed after exposing diodes to flow of gas blend hydrogen in nitrogen. Current change ratio about 700,000 with 0.1% hydrogen blend was achieved, which is more than two orders-of-magnitude improvement over the best result reported previously. Hydrogen detection limit of the diodes was estimated at 1 ppm H2/N2. The diodes, besides this extremely high sensitivity, have been temporally stable and of inexpensive production. Relatively more expensive GaN diodes have potential for functionality at high temperatures.
机译：InP和GaN半导体晶片表面上的沉积是通过AOT反胶束中钯（Pd）纳米颗粒（NPs）的异辛烷胶体溶液进行的。通过SEM监测蒸发的胶体和电泳沉积的层中的Pd NP。通过在预先沉积有Pd NP的半导体表面上与胶体石墨形成肖特基接触以及在空白表面上形成欧姆接触来制备二极管。二极管的正向和反向电流-电压特性显示出高整流比和高肖特基势垒高度，这证明费米能级引脚非常小。将二极管置于氮气中的混合氢气流中后，观察到电流大大增加。当氢含量为0.1％时，电流变化率达到约700,000，与以前报道的最佳结果相比，提高了两个数量级。二极管的氢检测极限估计为1 ppm H2 / N2。二极管除了具有极高的灵敏度外，还具有时间稳定性和廉价的生产能力。相对较昂贵的GaN二极管具有在高温下发挥功能的潜力。

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