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Wafer-Level Electrically Detected Magnetic Resonance: Magnetic Resonance in a Probing Station

机译：晶圆级电检测的磁共振：探测站中的磁共振

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摘要

We report on a novel semiconductor reliability technique that incorporates an electrically detected magnetic resonance (EDMR) spectrometer within a conventional semiconductor wafer probing station. EDMR is an ultrasensitive electron paramagnetic resonance technique with the capability to provide detailed physical and chemical information about reliability limiting defects in semiconductor devices. EDMR measurements have generally required a complex apparatus, not typically found in solid-state electronics laboratories. The union of a semiconductor probing station with EDMR allows powerful analytical measurements to be performed within individual devices at the wafer level. Our novel approach replaces the standard magnetic resonance microwave cavity or resonator with a small non- resonant near field microwave probe. Using this new approach we have demonstrated bipolar amplification effect and spin dependent charge pumping in various SiC based MOSFET structures. Although our studies have been limited to SiC based devices, the approach will be widely applicable to other types of MOSFETs, bipolar junction transistors, and various memory devices. The replacement of the resonance cavity with the very small non- resonant microwave probe greatly simplifies the EDMR detection scheme and allows for the incorporation of this powerful tool with a wafer probing station. We believe this scheme offers great promise for widespread utilization of EDMR in semiconductor reliability laboratories.
机译：我们报告了一种新型的半导体可靠性技术，该技术在传统的半导体晶圆探测站内结合了电检测磁共振（EDMR）光谱仪。 EDMR是一种超灵敏电子顺磁共振技术，能够提供有关半导体器件中限制可靠性的缺陷的详细物理和化学信息。 EDMR测量通常需要复杂的设备，这在固态电子实验室中通常是找不到的。半导体探测站与EDMR的结合使强大的分析测量能够在晶圆级的单个设备中执行。我们的新颖方法用小的非共振近场微波探头代替了标准的磁共振微波腔或共振器。使用这种新方法，我们已经证明了各种基于SiC的MOSFET结构中的双极放大效应和自旋相关的电荷泵浦。尽管我们的研究仅限于基于SiC的器件，但是该方法将广泛应用于其他类型的MOSFET，双极结型晶体管和各种存储器件。用非常小的非谐振微波探头替换谐振腔极大地简化了EDMR检测方案，并允许将此功能强大的工具与晶圆探测台结合使用。我们相信该方案为在半导体可靠性实验室中广泛使用EDMR提供了广阔的前景。

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