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Surface Oxygen Vacancies: Dynamics of Photo‐Induced Surface Oxygen Vacancies in Metal‐Oxide Semiconductors Studied Under Ambient Conditions (Adv. Sci. 22/2019)

机译：表面氧空位：在环境条件下研究的金属氧化物半导体中光诱导的表面氧空位的动力学（Adv。Sci。22/2019）

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Surface oxygen vacancy defects are some of the most reactive sites but are notoriously difficult to detect, often healing upon exposure to air. In article number , Ivan P. Parkin, Stefan A. Maier, and co‐workers show how photo‐induced enhanced Raman spectroscopy (PIERS) can be used to indirectly track vacancy formation and healing of photo‐induced vacancies under ambient conditions on metal oxide semiconductors.

机译：表面氧空位缺陷是一些最活跃的位点，但众所周知难以检测，通常在暴露于空气后会恢复。在文章编号中，伊万·帕金（Ivan P. Parkin），斯特凡·迈耶（Stefan A. Maier）及其同事展示了如何使用光致增强拉曼光谱（PIERS）来间接跟踪环境条件下金属氧化物上的空位形成和光致空位的愈合半导体。

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期刊名称 Advanced Science
作者
Daniel Glass; Emiliano Cortés; Sultan Ben‐Jaber; Thomas Brick; William J. Peveler; Christopher S. Blackman; Christopher R. Howle; Raul Quesada‐Cabrera; Ivan P. Parkin; Stefan A. Maier;
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年(卷),期 2019(6),22
年度 2019
页码 -1
总页数 1
原文格式 PDF
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关键词
defects; oxygen vacancy dynamics; surface‐enhanced Raman spectroscopy (SERS); titanium oxide;

机译：缺陷;氧空位动力学;表面增强拉曼光谱（SERS）;氧化钛;

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专利

1. Coloration and oxygen vacancies in wide band gap oxide semiconductors: Absorption at metallic nanoparticles induced by vacancy clustering—A case study on indium oxide [J] . Journal of Applied Physics . 2014,第5期

机译：宽带隙氧化物半导体中的着色和氧空位：空位聚集在金属纳米粒子上的吸收—以氧化铟为例
2. Coloration and oxygen vacancies in wide band gap oxide semiconductors: Absorption at metallic nanoparticles induced by vacancy clustering-A case study on indium oxide [J] . M. Albrecht, R. Schewski, K. lrmscher, Journal of Applied Physics . 2014,第5期

机译：宽带隙氧化物半导体中的着色和氧空位：空位聚集在金属纳米粒子上的吸收－以氧化铟为例
3. Interaction of light with the ZnO surface: Photon induced oxygen “breathing,” oxygen vacancies, persistent photoconductivity, and persistent photovoltage [J] . Gurwitz Ron, Cohen Rotem, Shalish Ilan Journal of Applied Physics . 2014,第3期

机译：光与ZnO表面的相互作用：光子诱导的氧气“呼吸”，氧气空位，持久的光电导和持久的光电压
4. Influence of Oxygen Vacancies in Gas Sensors Based on Metal-Oxide Semiconductors: A First-Principles Study [C] . Soufiane Krik, Andrea Gaiardo, Matteo Valt, AISEM national conference on sensors and microsystems . 2019

机译：基于金属氧化物半导体的气体传感器中氧空位的影响：第一性原理研究
5. Impacts of Oxygen Vacancies in Titanium Dioxide-Supported Metal Nanoparticles in the Oxygen Reduction Reaction and the Carbon Electrooxidation Reaction [D] . Sweeney, Samantha. 2018

机译：氧气空位在氧还原反应中二氧化钛支撑的金属纳米颗粒中的影响及碳电氧化反应
6. Dynamics of Photo‐Induced Surface Oxygen Vacancies in Metal‐Oxide Semiconductors Studied Under Ambient Conditions [O] . Daniel Glass, Emiliano Cortés, Sultan Ben‐Jaber, 2019

机译：在环境条件下研究金属氧化物半导体中光诱导表面氧空位的动力学
7. Dynamics of Photo‐Induced Surface Oxygen Vacancies in Metal‐Oxide Semiconductors Studied Under Ambient Conditions [O] . Daniel Glass, Emiliano Cortés, Sultan Ben‐Jaber, 2019

机译：在环境条件下研究的金属氧化物半导体中光诱导表面氧空位的动态

Surface Oxygen Vacancies: Dynamics of Photo‐Induced Surface Oxygen Vacancies in Metal‐Oxide Semiconductors Studied Under Ambient Conditions (Adv. Sci. 22/2019)

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