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Influence of Annealing Atmosphere on the Characteristics of Ga2O3/4H-SiC n-n Heterojunction Diodes

机译：退火气氛对Ga2O3 / 4H-SiC n-n异质结二极管特性的影响

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Ga O /4H-SiC n-n isotype heterojunction diodes were fabricated by depositing Ga O thin films by RF magnetron sputtering. The influence of annealing atmosphere on the film quality and electrical properties of Ga O layers was investigated. X-ray diffraction (XRD) analysis showed a significant increase in the peak intensities of different faces of β-Ga O {(−201), (−401) and (002)}. X-ray photoelectron spectroscopy (XPS) measurement showed that the atomic ratio of oxygen increases under high-temperature annealing. Moreover, an N -annealed diode exhibited a greater rectifying ratio and a lower thermal activation energy owing to the decrease in oxygen-related traps and vacancies on the Ga O film and Ga O –metal interface.

机译：通过RF磁控溅射沉积Ga O薄膜，制备了Ga O / 4H-SiC n-n同型异质结二极管。研究了退火气氛对Ga O薄膜质量和电学性能的影响。 X射线衍射（XRD）分析显示β-GaO {（-201），（-401）和（002）}的不同面的峰强度显着增加。 X射线光电子能谱（XPS）测量表明，在高温退火下，氧的原子比增加。此外，由于氧相关陷阱和Ga O薄膜和Ga O-金属界面上的空位的减少，N退火二极管表现出更高的整流比和更低的热活化能。

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期刊名称 Materials
作者
Young-Jae Lee; Michael A. Schweitz; Jong-Min Oh; Sang-Mo Koo;
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作者单位

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年(卷),期 2020(13),2
年度 2020
页码 -1
总页数 8
原文格式 PDF
正文语种
中图分类外科学;
关键词
gallium oxide; silicon carbide; heterojunction diodes; thermal activation energy;

机译：氧化镓;碳化硅;异质结二极管;热活化能;

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专利

1. Influence of Annealing Atmosphere on the Characteristics of Ga2O3/4H-SiC n-n Heterojunction Diodes [J] . Industrial and organizational psychology . 2020,第2期

机译：退火气氛对GA2O3 / 4H-SiC N-N异质结二极管特性的影响
2. High doped MBE Si p-n and n-n heterojunction diodes on 4H-SiC [J] . A. Perez-Tomas, M.R. Jennings, M. Davis, Microelectronics journal . 2007,第12期

机译：4H-SiC上的高掺杂MBE Si p-n和n-n异质结二极管
3. Steady state self-heating and dc current-voltage characteristics of high-voltage 4H-SiC p~+-n-n~+ rectifier diodes [J] . Michael E. Levinshtein, Tigran T. Mnatsakanov, Pavel A. Ivanov, Solid-State Electronics . 2007,第6期

机译：高压4H-SiC p〜+ -n-n〜+整流二极管的稳态自热和dc电流-电压特性
4. At Annealing at 1600 deg C of Al~+ Implanted p~+/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature [C] . Fabio Bergamini, Francesco Moscatelli, Mariaconcetta Canino European Conference on Silicon Carbide and Related Materials . 2005

机译：在Al〜+植入P〜+ / N 4H-SiC二极管的1600℃下退火：J-V特性分析与退火温度
5. Electrical characteristics of novel heterojunction diodes of thin relaxation semiconductors/p-silicon. [D] . Lee, Hyung Joo. 1995

机译：薄弛豫半导体/ p硅的新型异质结二极管的电气特性。
6. Fabrication and Characterization of Oxygenated AlN/4H-SiC Heterojunction Diodes [O] . Dong-Hyeon Kim, Seong-Ji Min, Jong-Min Oh, 2020

机译：含氧ALN / 4H-SIC异质结二极管的制备和表征
7. Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition [O] . Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., 2010

机译：通过分子束外延沉积形成的n-n和p-n Ge / SiC异质结二极管的界面特性
8. Study of Defect Behaviour in Ga2O3 Nanowires and Nano-Ribbons under Reducing Gas Annealing Conditions: Applications to Sensing. [R] . Prokes, S. M., Carlos, W. E., Glaser, E. R. 2007

机译：还原气体退火条件下Ga2O3纳米线和纳米带缺陷行为的研究 - 应用于传感器。

Influence of Annealing Atmosphere on the Characteristics of Ga2O3/4H-SiC n-n Heterojunction Diodes

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