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Evolutionary Computation for Parameter Extraction of Organic Thin-Film Transistors Using Newly Synthesized Liquid Crystalline Nickel Phthalocyanine

机译:新型液晶镍酞菁镍用于有机薄膜晶体管参数提取的进化计算

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摘要

In this work, the topic of the detrimental contact effects in organic thin-film transistors (OTFTs) is revisited. In this case, contact effects are considered as a tool to enhance the characterization procedures of OTFTs, achieving more accurate values for the fundamental parameters of the transistor threshold voltage, carrier mobility and on-off current ratio. The contact region is also seen as a fundamental part of the device which is sensitive to physical, chemical and fabrication variables. A compact model for OTFTs, which includes the effects of the contacts, and a recent proposal of an associated evolutionary parameter extraction procedure are reviewed. Both the model and the procedure are used to assess the effect of the annealing temperature on a nickel-1,4,8,11,15,18,22,25-octakis(hexyl)phthalocyanine (NiPc )-based OTFT. A review of the importance of phthalocyanines in organic electronics is also provided. The characterization of the contact region in NiPc OTFTs complements the results extracted from other physical–chemical techniques such as differential scanning calorimetry or atomic force microscopy, in which the transition from crystal to columnar mesophase imposes a limit for the optimum performance of the annealed OTFTs.
机译:在这项工作中,重新讨论了有机薄膜晶体管(OTFT)中有害接触效应的主题。在这种情况下,接触效应被认为是增强OTFT表征过程的工具,可为晶体管阈值电压,载流子迁移率和开关电流比的基本参数获得更准确的值。接触区域也被视为设备的基本部分,对物理,化学和制造变量敏感。审查了OTFT的紧凑模型,其中包括接触的影响,以及有关进化参数提取过程的最新建议。模型和程序均用于评估退火温度对基于1,4-,8,11,15,18,22,25-辛基(己基)酞菁镍(NiPc)的OTFT镍的影响。还综述了酞菁在有机电子产品中的重要性。 NiPc OTFTs中接触区域的特征补充了从其他物理化学技术(例如差示扫描量热法或原子力显微镜)中提取的结果,其中从晶体到柱状中间相的转变对退火的OTFT的最佳性能施加了限制。

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