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Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires

机译：阐明蚀刻时间关键参数对光学和电活性硅纳米线的影响

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In this work, vertically aligned silicon nanowires (SiNWs) with relatively high crystallinity have been fabricated through a facile, reliable, and cost-effective metal assisted chemical etching method. After introducing an itemized elucidation of the fabrication process, the effect of varying etching time on morphological, structural, optical, and electrical properties of SiNWs was analysed. The NWs length increased with increasing etching time, whereas the wires filling ratio decreased. The broadband photoluminescence (PL) emission was originated from self-generated silicon nanocrystallites (SiNCs) and their size were derived through an analytical model. FTIR spectroscopy confirms that the PL deterioration for extended time is owing to the restriction of excitation volume and therefore reduction of effective light-emitting crystallites. These SiNWs are very effective in reducing the reflectance to 9–15% in comparison with Si wafer. I–V characteristics revealed that the rectifying behaviour and the diode parameters calculated from conventional thermionic emission and Cheung’s model depend on the geometry of SiNWs. We deduce that judicious control of etching time or otherwise SiNWs’ length is the key to ensure better optical and electrical properties of SiNWs. Our findings demonstrate that shorter SiNWs are much more optically and electrically active which is auspicious for the use in optoelectronic devices and solar cells applications.
机译：在这项工作中，已经通过一种简便，可靠且具有成本效益的金属辅助化学蚀刻方法来制造具有相对较高结晶度的垂直排列的硅纳米线（SiNW）。在介绍了制造过程的逐项说明之后，分析了蚀刻时间变化对SiNWs的形态，结构，光学和电学性质的影响。随着蚀刻时间的增加，NW的长度增加，而线的填充率降低。宽带光致发​​光（PL）发射源于自生硅纳米晶体（SiNC），其大小通过分析模型得出。 FTIR光谱证实，由于激发体积的限制以及有效发光微晶的减少，PL长时间延长的劣化。与Si晶片相比，这些SiNW可以非常有效地将反射率降低到9-15％。 I–V特性表明，根据常规热电子发射和Cheung模型计算出的整流行为和二极管参数取决于SiNW的几何形状。我们推断，明智地控制蚀刻时间或SiNW的长度是确保SiNW更好的光学和电学性能的关键。我们的发现表明，较短的SiNW具有更高的光学和电活性，这对于光电子器件和太阳能电池应用而言是个好兆头。

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