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首页> 美国卫生研究院文献>Nanomaterials >Fabrication of Cu2ZnSnS4 Thin Films from Ball-Milled Nanoparticle inks under Various Annealing Temperatures
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Fabrication of Cu2ZnSnS4 Thin Films from Ball-Milled Nanoparticle inks under Various Annealing Temperatures

机译：在各种退火温度下用球磨纳米粒子油墨制备Cu2ZnSnS4薄膜

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摘要

Cu ZnSnS (CZTS) has been recognized as a promising thin-film absorber material of chalcopyrite-related solar cells. A two-stage method for fabricating CZTS films using CZTS nanoparticles was developed. Nanocrystal inks fabricated by a ball-milling method was utilized to °C deposit CZTS precursors by spin-coating approach. The CZTS precursors were annealed in the sulfur atmosphere under different annealing temperatures ranging from 550 °C to 650 °C. Influences of annealing temperature on grain growth, composition, crystallinity, and photovoltaic properties of CZTS films were characterized. With the increase of annealing temperature, grain growth was enhanced, while the sulfur atomic ratio fist increased then decreased. The crystallinity of the films was significantly improved after the annealing, and the obvious peak of the secondary phase of ZnS, were observed from the X-ray diffraction results, when the annealing temperature increased to 625 °C. However, the secondary phase was not detected from the surface Raman spectrum. Through comparing the Raman spectrum of different areas of the CZTS film, secondary phases of ZnS and SnS were observed, indicating the decomposition of CZTS films, due to the high temperature. The highest conversion efficiency of 7.5% was obtained when the annealing temperature was 600 °C.
机译：Cu ZnSnS（CZTS）被公认为是与黄铜矿相关的太阳能电池有希望的薄膜吸收材料。开发了一种使用CZTS纳米粒子制造CZTS薄膜的两步法。通过球磨法制备的纳米晶体油墨被用于通过旋涂法在C沉积CZTS前体。将CZTS前体在硫气氛中在550°C至650°C的不同退火温度下进行退火。表征了退火温度对CZTS薄膜晶粒生长，组成，结晶度和光电性能的影响。随着退火温度的升高，晶粒长大加快，硫原子比fist先升高后降低。退火后，当退火温度升高到625°C时，薄膜的结晶度得到了显着改善，并且从X射线衍射结果中可以看到ZnS的第二相的明显峰。但是，未从表面拉曼光谱中检测到第二相。通过比较CZTS薄膜不同区域的拉曼光谱，观察到ZnS和SnS的第二相，表明CZTS薄膜由于高温而分解。当退火温度为600℃时，最高转化率为7.5％。

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