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Enhanced Low-Neutron-Flux Sensitivity Effect in Boron-Doped Silicon

机译：掺硼硅中增强的低中子通量敏感性效应

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Space particle irradiation produces ionization damage and displacement damage in semiconductor devices. The enhanced low dose rate sensitivity (ELDRS) effect caused by ionization damage has attracted wide attention. However, the enhanced low-particle-flux sensitivity effect and its induction mechanism by displacement damage are controversial. In this paper, the enhanced low-neutron-flux sensitivity (ELNFS) effect in Boron-doped silicon and the relationship between the ELNFS effect and doping concentration are further explored. Boron-doped silicon is sensitive to neutron flux and ELNFS effect could be greatly reduced by increasing the doping concentration in the flux range of 5 × 10 –5 × 10 n cm s . The simulation based on the theory of diffusion-limited reactions indicated that the ELNFS in boron-doped silicon might be caused by the difference in the concentration of remaining vacancy-related defects ( ) under different neutron fluxes. The ELNFS effect in silicon becomes obvious when the ( ) is close to the boron doping concentration and decreased with the increase in boron doping concentration due to the remaining vacancy-related defects being covered. These conclusions are confirmed by the p -n-p Si-based bipolar transistors since the ELNFS effect in the low doping silicon increased the reverse leakage of the bipolar transistors and the common-emitter current gain ( ) dominated by highly doped silicon remained unchanged with the decrease in the neutron flux. Our work demonstrates that the ELNFS effect in boron-doped silicon can be well explained by noise diagnostic analysis together with electrical methods and simulation, which thus provide the basis for detecting the enhanced low-particle-flux damage effect in other semiconductor materials.
机译：空间粒子辐射在半导体器件中产生电离损伤和位移损伤。由电离损伤引起的增强的低剂量率敏感性（ELDRS）效应引起了广泛关注。然而，增强的低通量通量敏感性效应及其因位移损伤引起的诱导机理仍存在争议。本文进一步研究了掺硼硅中增强的低中子通量敏感性（ELNFS）效应以及ELNFS效应与掺杂浓度之间的关系。硼掺杂的硅对中子通量敏感，在5×10 –5×10 n cm s的通量范围内增加掺杂浓度可以大大降低ELNFS效应。基于扩散受限反应理论的模拟表明，掺硼硅中的ELNFS可能是由于不同中子通量下剩余的空位相关缺陷（）的浓度差异引起的。当（）接近硼掺杂浓度时，硅中的ELNFS效应变得明显，并且由于覆盖了剩余的空位相关缺陷，随着硼掺杂浓度的增加而降低。这些结论被基于p -np Si的双极晶体管所证实，因为低掺杂硅中的ELNFS效应增加了双极晶体管的反向泄漏，并且由高掺杂硅主导的共发射极电流增益（）保持不变，而随着降低在中子通量中我们的工作表明，通过噪声诊断分析以及电学方法和仿真可以很好地解释掺硼硅中的ELNFS效应，从而为检测其他半导体材料中增强的低粒子通量损伤效应提供了基础。

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