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首页> 美国卫生研究院文献>Sensors (Basel Switzerland) >Epitaxial Growth of Sc0.09Al0.91N and Sc0.18Al0.82N Thin Films on Sapphire Substrates by Magnetron Sputtering for Surface Acoustic Waves Applications
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Epitaxial Growth of Sc0.09Al0.91N and Sc0.18Al0.82N Thin Films on Sapphire Substrates by Magnetron Sputtering for Surface Acoustic Waves Applications

机译：SC0.09Al0.91N和SC0.18A10.82N的外延生长通过磁控溅射对表面声波应用的磁控溅射薄膜

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摘要

Scandium aluminum nitride (ScxAl1−xN) films are currently intensively studied for surface acoustic waves (SAW) filters and sensors applications, because of the excellent trade-off they present between high SAW velocity, large piezoelectric properties and wide bandgap for the intermediate compositions with an Sc content between 10 and 20%. In this paper, the growth of Sc0.09Al0.91N and Sc0.18Al0.82N films on sapphire substrates by sputtering method is investigated. The plasma parameters were optimized, according to the film composition, in order to obtain highly-oriented films. X-ray diffraction rocking-curve measurements show a full width at half maximum below 1.5°. Moreover, high-resolution transmission electron microscopy investigations reveal the epitaxial nature of the growth. Electrical characterizations of the Sc0.09Al0.91N/sapphire-based SAW devices show three identified modes. Numerical investigations demonstrate that the intermediate compositions between 10 and 20% of scandium allow for the achievement of SAW devices with an electromechanical coupling coefficient up to 2%, provided the film is combined with electrodes constituted by a metal with a high density.
机译：目前氮化钪（SCXA1-XN）薄膜目前用于表面声波（锯）滤波器和传感器应用，因为它们存在于高锯速度，大压电性能和中间组合物的宽带隙之间的优异权衡。 SC内容在10到20％之间。本文采用溅射法研究了SC0.09Al0.91N和SC0.18A10.82N膜的生长。根据薄膜组合物，优化等离子体参数，以获得高度取向的薄膜。 X射线衍射摇曲曲线测量显示在最大值低于1.5°的半部最大宽度下。此外，高分辨率透射电子显微镜调查揭示了生长的外延性质。 SC0.09A10.91N / SAPPHIRE的SAW器件的电气特性显示了三种识别的模式。数值研究表明，10至20％的钪之间的中间组合物允许实现具有高达2％的机电耦合系数的锯器件，只要薄膜与由具有高密度的金属构成的电极组合。

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