Continuous growth of high-quality single-layer graphene (SLG) is highly desirable in several electronic and optoelectronic applications. To fulfill such requirements, we proposed a low-cost, highly reproducible high-quality SLG synthesized by indigenously developed low-pressure chemical vapor deposition (LPCVD) setup. The quality of SLG is examined by Raman spectroscopy, where we have probed the I2D/IG ratio for continuous 30 runs to assess the reproducibility and quality of single-layer using proposed indigenous LPCVD setup for device fabrication. The highest I2D/IG ratio of SLG (5.82) was found with full width at half maximum values of 2D peak and G peak of ∼30.10 cm−1 and ∼20.86 cm–1, respectively. Further, high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy have been performed to study the quality of SLG. Thickness measurement of graphene with graphene grain size is calculated from atomic force microscopy studies, and the average grain size is found to be 1–3 μm. Moreover, I–V characteristicshave also been investigated by the two-probe method to ensure thequality of SLG. The lowest resistance of the SLG (∼387 Ω)was found at room temperature. Thus, this new indigenously developedlow-cost setup provides a novel alternative method to produce highlyreproducible metrology-grade continuous SLG on Cu substrate for next-generationquantum devices.
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机译：在几种电子和光电应用中，非常需要高质量的单层石墨烯（SLG）连续生长。为了满足这些要求，我们提出了一种低成本，可高度重现的高质量SLG，该SLG是通过本地开发的低压化学气相沉积（LPCVD）装置合成的。 SLG的质量通过拉曼光谱法进行了检验，其中我们已经探究了连续30次运行的I2D / IG比，以使用拟议的本地LPCVD装置进行器件制造来评估单层的可重复性和质量。发现SLG的I2D / IG比率最高（5.82），其2D峰和G峰的半峰全宽分别为〜30.10 cm -1 和〜20.86 cm –1 。此外，已经进行了高分辨率透射电子显微镜和X射线光电子能谱研究SLG的质量。通过原子力显微镜研究计算出具有石墨烯晶粒尺寸的石墨烯厚度测量值，发现平均晶粒尺寸为1-3μm。此外，IV特性还通过双探针方法进行了研究，以确保SLG的质量。 SLG的最低电阻（〜387Ω）在室温下被发现。因此，这种新的本土发展低成本的安装提供了一种新颖的替代方法来生产高品质用于下一代的可重现的计量级连续SLG铜基板量子设备。
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