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首页> 外文期刊>Acta Metallurgica et Materialia >THERMAL RESIDUAL STRESSES IN CERAMIC MATRIX COMPOSITES—Ⅱ. EXPERIMENTAL RESULTS FOR MODEL MATERIALS
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THERMAL RESIDUAL STRESSES IN CERAMIC MATRIX COMPOSITES—Ⅱ. EXPERIMENTAL RESULTS FOR MODEL MATERIALS

机译：陶瓷基复合材料的热残余应力—Ⅱ。模型材料的实验结果

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Texture and residual stresses present in SiC-matrix composites fabricated according to the CVD/CVI process have been approached via XRD experiments (pole figures, sin~2 ψ and ideal orientation methods) performed on model materials (CVD-deposits on plane graphite or sintered-SiC substrates as well as cylindrical microcomposites). Two potential interphase materials have been considered, pyrocar-bon and MoSi_2. SiC-coatings deposited on plane graphite substrates, from CH_3SiCl_3-H_2 exhibit a pronounced {111} fiber texture with its axis perpendicular to the substrate surface. MoSi_2 deposited from MoCl_4-SiCl_4-H_2-Ar is not significantly textured and pyrocarbon was assumed orthotropic. MoSi_2 and SiC deposited on plane graphite or sintered-SiC exhibit high levels of in-plane tensile residual stresses (800-1200 MPa). In graphite/MoSi_2/SiC and SiC/MoSi_2/SiC plane specimens, the residual stresses are tensile in MoSi_2 (800-1200 MPa) and compressive in SiC (250-400 MPa) whereas in SiC/PyC/SiC, they are compressive in PyC (≈90 MPa) and tensile in SiC (150 MPa). In cylindrical 100μm microcomposites, the axial and hoop residual stresses are tensile in the MoSi_2 interphase (1500-1900 MPa) and SiC matrix ( < 200 MPa), for SiC/MoSi_2/SiC, whereas they are of much lower intensities in SiC/PyC/SiC. A good agreement is observed between the residual stresses measured by XRD and calculated by a finite element method.
机译：通过XRD实验（极图，sin〜2ψ和理想取向方法）对模型材料（CVD沉积在平面石墨上或烧结后）进行了实验，得出了根据CVD / CVI工艺制造的SiC基复合材料中存在的织构和残余应力。 -SiC基材以及圆柱形微复合材料。已经考虑了两种潜在的相间材料，焦碳和MoSi_2。从CH_3SiCl_3-H_2沉积在平面石墨基材上的SiC涂层显示出明显的{111}纤维织构，其轴垂直于基材表面。从MoCl_4-SiCl_4-H_2-Ar沉积的MoSi_2没有明显的织构，并且认为热碳为正交各向异性。沉积在平面石墨或烧结SiC上的MoSi_2和SiC表现出高水平的平面内拉伸残余应力（800-1200 MPa）。在石墨/ MoSi_2 / SiC和SiC / MoSi_2 / SiC平面试样中，残余应力在MoSi_2（800-1200 MPa）中是拉伸的，而在SiC（250-400 MPa）中是压缩的，而在SiC / PyC / SiC中，残余应力是在Si中压缩的。 PyC（≈90MPa）和SiC拉伸强度（150 MPa）。对于SiC / MoSi_2 / SiC，在100μm圆柱形微复合材料中，轴向应力和环向残余应力在MoSi_2相间（1500-1900 MPa）和SiC基体（<200 MPa）中是拉伸的，而在SiC / PyC中强度要低得多/ SiC。通过XRD测量并通过有限元法计算出的残余应力之间观察到很好的一致性。

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