Czochralski Growth and Optical Properties of (Lu_xGd_(1-x))_2SiO_5 Solid Solution Crystals Single Doped with Sm~(3+) and Dy~(3+)

W. Ryba-Romanowski; A. Strzep; M. Glowacki; R. Lisiecki; P. Solarz; J.Z. Domagala

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Czochralski Growth and Optical Properties of (Lu_xGd_(1-x))_2SiO_5 Solid Solution Crystals Single Doped with Sm~(3+) and Dy~(3+)

机译：单掺杂Sm〜（3+）和Dy〜（3+）的（Lu_xGd_（1-x））_ 2SiO_5固溶体晶体的直拉生长和光学性质

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Solid solution crystals (Lu_xGd_(1-x))_2SiO_5 single doped with Sm~(3+) and Dy~(3+) were grown by the Czochralski method. Segregation coefficients Lu/Gd, melting temperatures and structures of solid solution crystals were determined for 0.15 ≤ x ≤ 0.8. It was found that for x ≥ 0.17 the crystals belong to the monoclinic system within a space group C2/c and their melting temperature diminishes monotonously from 1990 ℃ to 1780 ℃ when x decreases from 0.8 to 0.15. Disparity of ionic radii of Lu~(3+) and Gd~(3+) induces structural disorder that brings about an inhomogeneous broadening of spectral lines in absorption and emission spectra of incorporated luminescent Sm~(3+) and Dy~(3+) ions. Optical properties of obtained crystals were determined based on results of measurement of absorption and emission spectra and luminescence decay curves. Spectroscopic investigation revealed that Sm~(3+) doped crystals show intense emission distributed in the visible-near infrared region with the most intense band centred at 605 nm and characterized by a branching ratio of 0.43. Emission spectrum of Dy~(3+) doped crystals is dominated by a band centred at 575 nm and characterized by a branching ratio of 0.58. It has been concluded that the systems under study are potential laser materials able to generate visible emission upon GaN/InGaN laser diode pumping.

机译：通过Czochralski法生长了单掺有Sm〜（3+）和Dy〜（3+）的固溶体晶体（Lu_xGd_（1-x））_ 2SiO_5。测定了0.15≤x≤0.8的偏析系数Lu / Gd，熔融温度和固溶体晶体的结构。发现当x≥0.17时，该晶体属于C2 / c空间群内的单斜晶系，当x从0.8降至0.15时，其熔化温度从1990℃至1780℃单调降低。 Lu〜（3+）和Gd〜（3+）的离子半径之差会引起结构混乱，从而导致掺入的发光Sm〜（3+）和Dy〜（3+）的吸收和发射光谱中的谱线不均匀加宽）离子。基于吸收和发射光谱的测量结果以及发光衰减曲线来确定获得的晶体的光学性质。光谱研究表明，掺杂Sm〜（3+）的晶体在可见光-近红外区域具有强发射分布，其中最强的谱带集中在605 nm处，支化比为0.43。 Dy〜（3+）掺杂晶体的发射光谱主要集中在575 nm处，其支化比为0.58。已经得出结论，正在研究的系统是潜在的激光材料，能够在GaN / InGaN激光二极管泵浦时产生可见光。

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来源
《Acta Physica Polonica》 |2013年第2期|321-328|共8页
作者
W. Ryba-Romanowski; A. Strzep; M. Glowacki; R. Lisiecki; P. Solarz; J.Z. Domagala;
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作者单位

Institute of Low Temperature and Structure Research, Polish Academy of Sciences Okolna 2, 50-422 Wroclaw, Poland;

Institute of Low Temperature and Structure Research, Polish Academy of Sciences Okolna 2, 50-422 Wroclaw, Poland;

Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw, Poland;

Institute of Low Temperature and Structure Research, Polish Academy of Sciences Okolna 2, 50-422 Wroclaw, Poland;

Institute of Low Temperature and Structure Research, Polish Academy of Sciences Okolna 2, 50-422 Wroclaw, Poland;

Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw, Poland;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
doped-insulator lasers and other solid state lasers; laser materials; absorption and reflection spectra: visible and ultraviolet; solid alkali halides;

机译：掺杂绝缘体激光器和其他固态激光器;激光材料吸收和反射光谱：可见光和紫外线;固体碱金属卤化物;

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Czochralski Growth and Optical Properties of (Lu_xGd_(1-x))_2SiO_5 Solid Solution Crystals Single Doped with Sm~(3+) and Dy~(3+)

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