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Fermi Level Positions and Induced Band Bending at Single Crystalline Anatase (101) and (001) Surfaces: Origin of the Enhanced Photocatalytic Activity of Facet Engineered Crystals

机译:单晶锐钛矿(101)和(001)表面上的费米能级位置和诱导的带弯曲:刻面工程晶体增强的光催化活性的起源

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摘要

Single crystalline anatase is used to prepare well defined (001) and (101) surfaces in ultrahigh vacuum (UHV) in different states: sputtered, annealed, stoichiometric, and oxidized. The electronic properties of the well-defined surfaces are investigated by X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy after UHV transfer. The Fermi level of (001) facets for all applied surface conditions is lower than that of the (101) facets by 150-450 meV. The energy difference leads to a potential difference (band bending) at the interface between the (101) and (001) facets, resulting in the migration of photogenerated electrons and holes to different directions namely to the (101) and (001) facets, respectively. Photoelectron spectroscopy measurements clearly indicate for the first time that differences in the surface electronic structure and related potential of different facets explain a vectorial electron-hole pair separation to different reaction sites providing design criteria for enhanced photocatalysis.
机译:单晶锐钛矿用于在不同状态的超高真空(UHV)中制备轮廓分明的(001)和(101)表面:溅射,退火,化学计量和氧化状态。 UHV转移后,通过X射线光电子能谱和紫外光电子能谱研究轮廓分明的表面的电子特性。在所有施加的表面条件下,(001)刻面的费米能级比(101)刻面的费米能级低150-450 meV。能量差导致(101)和(001)小平面之间的界面处发生电势差(带弯曲),从而导致光生电子和空穴向不同方向(即向(101)和(001)小平面)迁移,分别。光电子能谱测量首次清楚地表明,表面电子结构的差异和不同面的相关电势可以解释矢量电子-空穴对到不同反应部位的分离,从而为增强光催化提供了设计标准。

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