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首页> 外文期刊>Advanced energy materials >Synergistical Enhancement of Thermoelectric Properties in n-Type Bi_2O_2Se by Carrier Engineering and Hierarchical Microstructure
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Synergistical Enhancement of Thermoelectric Properties in n-Type Bi_2O_2Se by Carrier Engineering and Hierarchical Microstructure

机译：载体工程和递阶微观结构协同增强n型Bi_2O_2Se中的热电性质

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摘要

Oxygen-containing compounds are promising thermoelectric (TE) materials for their chemical and thermal stability. As compared with the high-performance p-type counterparts (e.g., ZT approximate to 1.5 for BiCuSeO), the enhancement of the TE performance of n-type oxygen-containing materials remains challenging due to their mediocre electrical conductivity and high thermal conductivity. Here, n-type layered Bi2O2Se is reported as a potential TE material, of which the thermal conductivity and electrical transport properties can be effectively tuned via carrier engineering and hierarchical microstructure. By selective modification of insulating [Bi2O2](2+) layers with Ta dopant, carrier concentration can be increased by four orders of magnitude (from 10(15) to 10(19) cm(-3)) while relatively high carrier mobility can be maintained, thus greatly enhancing the power factors (approximate to 451.5 mu W K-2 m(-1)). Meanwhile, the hierarchical microstructure can be induced by Ta doping, and the phonon scattering can be strengthened by atomic point defects, nanodots of 5-10 nm and grains of sub-micrometer level, which progressively suppresses the lattice thermal conductivity. Accordingly, the ZT value of Bi1.90Ta0.10O2Se reaches 0.36 at 773 K, a approximate to 350% improvement in comparison with that of the pristine Bi2O2Se. The average ZT value of 0.30 from 500 to 823 K is outstanding among n-type oxygen-containing TE materials. This work provides a desirable way for enhancing the ZT values in oxygen-containing compounds.
机译：含氧化合物因其化学和热稳定性而成为有前途的热电（TE）材料。与高性能p型对应物（例如，BiCuSeO的ZT约为1.5）相比，由于n型含氧材料的中等电导率和高导热率，其TE性能的增强仍然具有挑战性。在此，n型层状Bi2O2Se被报道为潜在的TE材料，其热导率和电传输特性可以通过载体工程和分层微结构有效地调整。通过用Ta掺杂剂选择性改性绝缘的[Bi2O2]（2+）层，可以将载流子浓度提高四个数量级（从10（15）到10（19）cm（-3）），而载流子迁移率可以相对较高保持功率，从而大大提高了功率因数（大约为451.5μW K-2 m（-1））。同时，通过Ta掺杂可以诱导层级微观结构，并且通过原子点缺陷，5-10nm的纳米点和亚微米级的晶粒可以增强声子散射，从而逐渐抑制晶格热导率。因此，Bi1.90Ta0.10O2Se的ZT值在773 K时达到0.36，与原始Bi2O2Se相比，提高了约350％。在n型含氧TE材料中，从500到823 K的平均ZT值为0.30。这项工作为提高含氧化合物的ZT值提供了一种理想的方法。

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  • 来源
    《Advanced energy materials》 |2019年第31期|1900354.1-1900354.7|共7页
  • 作者

    Tan Xing; Liu Yaochun; Liu Rui; Zhou Zhifang; Liu Chan; Lan Jin-Le; Zhang Qinghua; Lin Yuan-Hua; Nan Ce-Wen;

  • 作者单位

    Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China;

    Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China;

    Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China;

    Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China;

    Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China;

    Beijing Univ Chem Technol, Coll Mat Sci & Engn, State Key Lab Organ Inorgan Composite, Beijing 100029, Peoples R China;

    Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China;

    Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China;

    Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China;

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  • 正文语种 eng
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  • 关键词

    Bi2O2Se; carrier engineering; hierarchical microstructures; thermoelectrics;

    机译：Bi2O2se;载波工程;等级微结构;热电;

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