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首页> 外文期刊>Advanced energy materials >Low Temperature Synthesis of Stable γ-CsPbI_3 Perovskite Layers for Solar Cells Obtained by High Throughput Experimentation
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Low Temperature Synthesis of Stable γ-CsPbI_3 Perovskite Layers for Solar Cells Obtained by High Throughput Experimentation

机译：高通量实验获得的太阳能电池稳定γ-CsPbI_3钙钛矿层的低温合成

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摘要

The structural phases and optoelectronic properties of coevaporated CsPbI3 thin films with a wide range of [CsI]/[PbI2] compositional ratios are investigated using high throughput experimentation and gradient samples. It is found that for CsI-rich growth conditions, CsPbI3 can be synthesized directly at low temperature into the distorted perovskite gamma-CsPbI3 phase without detectable secondary phases. In contrast, PbI2-rich growth conditions are found to lead to the non-perovskite delta-phase. Photoluminescence spectroscopy and optical-pump THz-probe mapping show carrier lifetimes larger than 75 ns and charge carrier (sum) mobilities larger than 60 cm(2) V-1 s(-1) for the gamma-phase, indicating their suitability for high efficiency solar cells. The dependence of the carrier mobilities and luminescence peak energy on the Cs-content in the films indicates the presence of Schottky defect pairs, which may cause the stabilization of the gamma-phase. Building on these results, p-i-n type solar cells with a maximum efficiency exceeding 12% and high shelf stability of more than 1200 h are demonstrated, which in the future could still be significantly improved, judging on their bulk optoelectronic properties.
机译：使用高通量实验和梯度样品研究了具有宽范围[CsI] / [PbI2]组成比的共蒸发CsPbI3薄膜的结构相和光电性能。发现对于富含CsI的生长条件，CsPbI3可以在低温下直接合成为畸变的钙钛矿γ-CsPbI3相，而没有可检测的第二相。相反，发现富含PbI 2的生长条件导致非钙钛矿δ相。光致发光光谱和光泵THz探针映射显示，对于γ相，载流子寿命大于75 ns，电荷载流子（总）迁移率大于60 cm（2）V-1 s（-1），表明它们适用于高高效太阳能电池。载流子迁移率和发光峰值能量对薄膜中Cs含量的依赖性表明存在肖特基缺陷对，这可能会导致γ相的稳定化。基于这些结果，证明了p-i-n型太阳能电池的最大效率超过12％，并且具有超过1200 h的高储存稳定性，根据其整体光电性能，将来仍可以显着改善。

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  • 来源
    《Advanced energy materials》 |2019年第22期|1900555.1-1900555.8|共8页
  • 作者

    Becker Pascal; Marquez Jose A.; Just Justus; Al-Ashouri Amran; Hages Charles; Hempel Hannes; Jost Marko; Albrecht Steve; Frahm Ronald; Unold Thomas;

  • 作者单位

    Helmholtz Zentrum Berlin, Hahn Meitner Pl 1, D-14109 Berlin, Germany|Berg Univ Wuppertal, Fac Math & Nat Sci, Gausstr 20, D-42119 Wuppertal, Germany;

    Helmholtz Zentrum Berlin, Hahn Meitner Pl 1, D-14109 Berlin, Germany;

    Helmholtz Zentrum Berlin, Hahn Meitner Pl 1, D-14109 Berlin, Germany|Lund Univ, MAX IV Lab, POB 118, SE-22100 Lund, Sweden;

    Helmholtz Zentrum Berlin, Young Investigator Grp Perovskite Tandem Solar Ce, Kekulestr 5, D-12489 Berlin, Germany;

    Helmholtz Zentrum Berlin, Hahn Meitner Pl 1, D-14109 Berlin, Germany;

    Helmholtz Zentrum Berlin, Hahn Meitner Pl 1, D-14109 Berlin, Germany;

    Helmholtz Zentrum Berlin, Young Investigator Grp Perovskite Tandem Solar Ce, Kekulestr 5, D-12489 Berlin, Germany;

    Helmholtz Zentrum Berlin, Young Investigator Grp Perovskite Tandem Solar Ce, Kekulestr 5, D-12489 Berlin, Germany|Tech Univ Berlin, Fac Elect Engn & Comp Sci 4, D-10587 Berlin, Germany;

    Berg Univ Wuppertal, Fac Math & Nat Sci, Gausstr 20, D-42119 Wuppertal, Germany;

    Helmholtz Zentrum Berlin, Hahn Meitner Pl 1, D-14109 Berlin, Germany;

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  • 正文语种 eng
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  • 关键词

    coevaporation; high throughput characterization; inorganic halide perovskites; optoelectronics; thin film solar cells;

    机译：共存;高吞吐量表征;无机卤化物蠕动;光电子;薄膜太阳能电池;

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