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首页> 外文期刊>Advanced energy materials >Highly Stretchable Supercapacitors via Crumpled Vertically Aligned Carbon Nanotube Forests
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Highly Stretchable Supercapacitors via Crumpled Vertically Aligned Carbon Nanotube Forests

机译：通过皱折的垂直排列的碳纳米管森林可高度拉伸的超级电容器

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摘要

Stretchable supercapacitors have received increasing attention due to their broad applications in developing self-powered stretchable electronics for wearable electronics, epidermal and implantable electronics, and biomedical devices that are capable of sustaining large deformations and conforming to complicated surfaces. In this work, a new type of highly stretchable and reliable supercapacitor is developed based on crumpled vertically aligned carbon nanotube (CNT) forests transferred onto an elastomer substrate with the assistance of a thermal annealing process in atmosphere environment. The crumpled CNT-forest electrodes demonstrated good electrochemical performance and stability under either uniaxial (300%) or biaxial strains (300% x 300%) for thousands of stretching-relaxing cycles. The resulting supercapacitors can sustain a stretchability of 800% and possess a specific capacitance of 5 mF cm(-2) at the scan rate of 50 mV s(-1). Furthermore, the crumpled CNT-forest electrodes can be easily decorated with impregnated metal oxide nanoparticles to improve the specific capacitance and energy density of the supercapacitors. The approach developed in this work offers an alternative strategy for developing novel stretchable energy devices with vertically aligned nanotubes or nanowires for advanced applications in stretchable, flexible, and wearable electronic systems.
机译：可拉伸超级电容器由于在开发可穿戴电子设备，表皮和植入式电子设备以及能够承受大变形并适应复杂表面的生物医学设备的自供电可拉伸电子设备中的广泛应用而受到越来越多的关注。在这项工作中，基于大气环境中的热退火工艺，将压皱的垂直排列的碳纳米管（CNT）林转移到弹性体基材上，从而开发出一种新型的高度可拉伸且可靠的超级电容器。皱折的CNT-forest电极在数千个松弛松弛循环中，在单轴（300％）或双轴应变（300％x 300％）下均表现出良好的电化学性能和稳定性。所得超级电容器可以维持800％的可拉伸性，并且在50 mV s（-1）的扫描速率下具有5 mF cm（-2）的比电容。此外，可以使用浸渍的金属氧化物纳米粒子轻松装饰皱折的CNT-forest电极，以提高超级电容器的比电容和能量密度。这项工作中开发的方法提供了一种替代策略，用于开发具有垂直排列的纳米管或纳米线的新型可拉伸能源设备，以在可拉伸，柔性和可穿戴电子系统中进行高级应用。

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