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CsI-Antisolvent Adduct Formation in All-Inorganic Metal Halide Perovskites

机译：全无机金属卤化物钙钛矿中CsI-抗溶剂加合物的形成

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摘要

The excellent optoelectronic properties demonstrated by hybrid organic/inorganic metal halide perovskites are all predicated on precisely controlling the exact nucleation and crystallization dynamics that occur during film formation. In general, high-performance thin films are obtained by a method commonly called solvent engineering (or antisolvent quench) processing. The solvent engineering method removes excess solvent, but importantly leaves behind solvent that forms chemical adducts with the lead-halide precursor salts. These adduct-based precursor phases control nucleation and the growth of the polycrystalline domains. There has not yet been a comprehensive study comparing the various antisolvents used in different perovskite compositions containing cesium. In addition, there have been no reports of solvent engineering for high efficiency in all-inorganic perovskites such as CsPbI3. In this work, inorganic perovskite composition CsPbI3 is specifically targeted and unique adducts formed between CsI and precursor solvents and antisolvents are found that have not been observed for other A-site cation salts. These CsI adducts control nucleation more so than the PbI2-dimethyl sulfoxide (DMSO) adduct and demonstrate how the A-site plays a significant role in crystallization. The use of methyl acetate (MeOAc) in this solvent engineering approach dictates crystallization through the formation of a CsI-MeOAc adduct and results in solar cells with a power conversion efficiency of 14.4%.
机译：杂化有机/无机金属卤化物钙钛矿显示出的优异的光电性能都取决于精确控制成膜过程中发生的精确成核和结晶动力学。通常，高性能薄膜是通过通常称为溶剂工程（或抗溶剂淬火）处理的方法获得的。溶剂工程方法去除了多余的溶剂，但重要的是留下了与卤化铅前体盐形成化学加合物的溶剂。这些基于加合物的前体相控制多晶域的成核和生长。尚未进行全面的研究，比较含铯的不同钙钛矿组合物中使用的各种抗溶剂。另外，还没有关于在诸如CsPbI 3的全无机钙钛矿中进行溶剂工程以提高效率的报道。在这项工作中，将无机钙钛矿组合物CsPbI3专门作为目标，发现在CsI与前体溶剂和反溶剂之间形成的独特加合物尚未见到其他A-位阳离子盐。这些CsI加合物比PbI2-二甲基亚砜（DMSO）加合物更能控制成核作用，并证明了A位如何在结晶中起重要作用。在这种溶剂工程方法中，使用乙酸甲酯（MeOAc）可以通过形成CsI-MeOAc加合物来决定结晶，从而使太阳能电池的功率转换效率达到14.4％。

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