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Localized Traps Limited Recombination in Lead Bromide Perovskites

机译：铅溴普罗米斯基酯中的局部陷阱有限的重组

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摘要

Traps exert an omnipotent influence over the performance of halide perovskite optoelectronic devices. A dear understanding of the origin and nature of the traps in halide perovskites is the key to controlling them and realizing optimal devices. Herein, the role of localized traps on the optical properties of lead bromide perovskite films is investigated. In the low-temperature orthorhombic phase of CH3NH3PbBr3 perovskite, band-edge carrier dynamics exhibit a power-law decay due to the presence of structural-disorder-induced localized traps, which has a depth of approximate to 40 meV. The continuous distribution of these localized traps gives rise to a broad sub-band-gap emission that becomes more prominent in thicker films with a larger trap density. The presence of this emission only from the hybrid organic-inorganic perovskites points to the vital role of organic dipoles in localized trap states formation. This study explicates the nature of these localized traps as well as their nontrivial role in carrier recombination kinetics, which is of fundamental importance in perovskites optoelectronics.
机译：陷阱对卤化物钙钛矿光电器件的性能产生无所不能的影响。亲爱的对陷阱中陷阱的起源和性质的理解是控制它们并实现最佳设备的关键。这里，研究了局部疏水膜对铅溴钙钛矿膜的光学性质的作用。在CH3NH3PBBBBBBBR3钙钛矿的低温正畸相中，带边缘载体动力学由于存在结构无障碍诱导的局部疏水阀而表现出电力法衰变，其具有近似为40meV的深度。这些局部陷阱的连续分布产生了宽的亚带隙发射，其在具有较大捕集密度的较大膜中变得更加突出。仅来自杂交有机无机钙钛矿的这种发射的存在指向有机偶极物在局部捕集状态形成中的重要作用。本研究阐述了这些局部陷阱的性质以及它们在载体重组动力学中的非牵种作用，这在佩洛夫斯基茨光电子中具有基本重要性。

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  • 来源
    《Advanced energy materials》 |2019年第12期|1803119.1-1803119.10|共10页
  • 作者

    Fu Jianhui; Jamaludin Nur Fadilah; Wu Bo; Li Mingjie; Solanki Ankur; Ng Yan Fong; Mhaisalkar Subodh; Huan Cheng Hon Alfred; Sum Tze Chien;

  • 作者单位

    Nanyang Technol Univ Sch Phys & Math Sci Div Phys & Appl Phys 21 Nanyang Link Singapore 637371 Singapore;

    Energy Res Inst NTU ERI N Res Techno Plaza X Frontier Block Level 5 Singapore 637553 Singapore|Interdisciplinary Grad Sch Block S2-B3a-01 50 Nanyang Ave Singapore 639798 Singapore|Nanyang Technol Univ Sch Mat Sci & Engn Block N4-1 50 Nanyang Ave Singapore 639798 Singapore;

    Nanyang Technol Univ Sch Phys & Math Sci Div Phys & Appl Phys 21 Nanyang Link Singapore 637371 Singapore|South China Normal Univ South China Acad Adv Optoelect Inst Elect Paper Displays Guangzhou 510006 Guangdong Peoples R China;

    Nanyang Technol Univ Sch Phys & Math Sci Div Phys & Appl Phys 21 Nanyang Link Singapore 637371 Singapore;

    Nanyang Technol Univ Sch Phys & Math Sci Div Phys & Appl Phys 21 Nanyang Link Singapore 637371 Singapore;

    Energy Res Inst NTU ERI N Res Techno Plaza X Frontier Block Level 5 Singapore 637553 Singapore|Interdisciplinary Grad Sch Block S2-B3a-01 50 Nanyang Ave Singapore 639798 Singapore|Nanyang Technol Univ Sch Mat Sci & Engn Block N4-1 50 Nanyang Ave Singapore 639798 Singapore;

    Energy Res Inst NTU ERI N Res Techno Plaza X Frontier Block Level 5 Singapore 637553 Singapore|Nanyang Technol Univ Sch Mat Sci & Engn Block N4-1 50 Nanyang Ave Singapore 639798 Singapore;

    Nanyang Technol Univ Sch Phys & Math Sci Div Phys & Appl Phys 21 Nanyang Link Singapore 637371 Singapore|ASTAR IMRE 2 Fusionopolis Way Innovis 08-03 Singapore 138634 Singapore;

    Nanyang Technol Univ Sch Phys & Math Sci Div Phys & Appl Phys 21 Nanyang Link Singapore 637371 Singapore;

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  • 正文语种 eng
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  • 关键词

    carrier dynamics; halide perovskites; localized traps; photoluminescence; thin films;

    机译：载体动力学;卤化物蠕动;局部陷阱;光致发光;薄膜;

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